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A New Approach for Low Defect Density GaAs On Patterned Si Substrates by Mocvd

Published online by Cambridge University Press:  25 February 2011

N.H. Karam,
V. Haven,
K. Ismail,
F. Legoues,
J. Carter and
Henry I. Smith
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01801
V. Haven
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01801
K. Ismail
Affiliation:
IBM T.J. Watson Research Center, NY 10598
F. Legoues
Affiliation:
IBM T.J. Watson Research Center, NY 10598
J. Carter
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

High quality GaAs films have been deposited on sawtooth-patterned (0.2 μm period) Si substrates by MOCVD. Three inch diameter Si wafers were patterned using a combination of holographic lithography and wet chemical etching. A two-step deposition process was used resulting in planar films with surface morphology comparable to films deposited on unpatterned substrates. The initial low temperature nucleation layer was found to be amorphous and conformed to the patterned Si surface. Rapid thermal annealing and thermal cycle growth resulted in substantial reduction in the threading defect density. The MOCVD growth and characterization of these films and the possible mechanisms responsible for the reduction/elimination of the defects at the GaAs/Si interface are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991, 399
Copyright
Copyright © Materials Research Society 1991

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References

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