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A New Gold-Indium Eutectic Bonding Method

Published online by Cambridge University Press:  15 February 2011

Chin C. Lee,
Chen Y. Wang,
Goran Matijasevic and
Steve S. Chan
Chin C. Lee
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine, CA 92717
Chen Y. Wang
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine, CA 92717
Goran Matijasevic
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine, CA 92717
Steve S. Chan
Affiliation:
TRW, Redondo Beach, CA 90278
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Abstract

Au-In eutectic bonding method which needs only a low process temperature (˜200°C) but produces high temperature (450°C) bonds is reported. In this study, multiple layers of Au and In are deposited directly on semiconductor wafers in one vacuum cycle to prevent indium oxidation and then bonded to substrates coated with Au. At 200°C the indium layer melts and dissolves the gold layers to form a mixture of liquid and solid. The diffusion process continues until the bond solidifies. Upon solidification, the bond has a melting temperature of 456.5°C. Scanning Acoustic Microscope was used to determine the excellent bonding quality before and after thermal shock tests and SEM with EDX capability is employed to determine the composition of the resulting bonds.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992, 305
Copyright
Copyright © Materials Research Society 1992

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References

1. Okamoto, H. and Massalski, T. B. in Binary Alloy Phase Diagrams, edited by Massalski, T. B. (ASM International, Metals Park, Ohio, 1990), pp. 381–383.Google Scholar
2. Lee, C. C., Wang, C. Y., and Matijasevic, G. S., IEEE Trans. Compon. Hybrids Manuf. Technol. 14, 407 (1991).Google Scholar
3. Kang, S. K. and Woychik, C. G. in Electronic Packaging Materials Science III, edited by Jaccodine, R., Jackson, K. A., and Sundahl, R. C. (Mater. Res. Soc. Proc. 108, Pittsburgh, PA 1988) pp. 359–364.Google Scholar
4. Lee, C. C. and Wang, C. Y., Thin Solid Films 208, 202 (1992).CrossRefGoogle Scholar
5. Bernstein, L., J. Electrochem. Soc. 113, 1282 (1966).Google Scholar
6. Bjøntegaard, J., Buene, L., Finstad, T., Lønsjø, O. and Olsen, T., Thin Solid Films 101, 253 (1983).CrossRefGoogle Scholar
7. Simić, V. and Marinković, Ž., Thin Solid Films 41, 57 (1977).CrossRefGoogle Scholar
8. Marinković, Ž. and Simić, V., J. of Less-Common Met. 115,225 (1986).Google Scholar
9. Ornellas, D. L. and Catalano, E., Rev. Sci. Instrum. 45, 955 (1974).Google Scholar
10. Powell, G. W. and Braun, J. D., Trans. AIME 230, 694 (1964).Google Scholar
11. Jacobson, D. M. and Humpston, G., Gold Bull. 22, 9 (1989).Google Scholar
12. Nikitina, V. K., Babitsyna, A.A., and Lobanova, Yu. K., Inorganic Materials 7, 371 (1971).Google Scholar
13. Matijasevic, G. S. and Lee, C. C., J. Electronic Mater. 8, 327 (1989).CrossRefGoogle Scholar