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New Slurry Formulation for Copper-CMP Process in a Damascene Integration Scheme

Published online by Cambridge University Press:  01 February 2011

Valentina L. Terzieva,
Bram M. Sijmus,
Marc A. Meuris,
Lothar Puppe and
Gerd Passing
Valentina L. Terzieva
Affiliation:
IMEC, Leuven, Belgium
Bram M. Sijmus
Affiliation:
IMEC, Leuven, Belgium
Marc A. Meuris
Affiliation:
IMEC, Leuven, Belgium
Lothar Puppe
Affiliation:
H. C. Starck, Leverkusen Germany
Gerd Passing
Affiliation:
H. C. Starck, Leverkusen Germany
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Abstract

In this work novel slurries both for copper and tantalum nitride removal were developed. In the first step the Cu bulk is removed, by using high selective slurry, which stops on the underlying TaN barrier. The selectivity of Cu vs. TaN achieved with this slurry is larger than 1/100. High selective second step slurry is further introduced for removing the barrier material. In the present work data concerning dishing and erosion will be presented as a function of line width and pattern density across the wafer. Electrical yield measurements on shorts and opens of meander-fork structures will be discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002, I3.4
Copyright
Copyright © Materials Research Society 2002

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