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Nitride Laser Diodes With InGaN Based Mqw Structures

Published online by Cambridge University Press:  10 February 2011

Lisa Sugiura,
Jobji Nishio,
Masaaki Onomura,
Shin-Ya Nunoue,
Kazuhiko Itaya and
Masayuki Ishikawa
Lisa Sugiura
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
Jobji Nishio
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
Masaaki Onomura
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
Shin-Ya Nunoue
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
Kazuhiko Itaya
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
Masayuki Ishikawa
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan lisa.sugiura@toshiba.co.jp
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Abstract

Advantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997, 1157
Copyright
Copyright © Materials Research Society 1998

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References

[1] Nakamura, S., Senoh, M., Iwase, N. and Nagahama, S., Jpn. J. Appl. Phys. Lett. 34, L797 (1995).10.1143/JJAP.34.L797Google Scholar
[2] Nakamura, S., Senoh, M., Iwase, N. and Nagahama, S., Yamada, T. and Mukai, T., Jpn. J. Appl. Phys. Lett. 34, L1332 (1995).10.1143/JJAP.34.L1332Google Scholar
[3] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).10.1143/JJAP.35.L74Google Scholar
[4] Akasaki, I., Sota, S., Sakai, H., Tanak, T., K oike, M., and Amano, H., Electron. Lett. 32, 1105 (1996).Google Scholar
[5] Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, Y., Ohba, Y., Hatakoshi, G., and Ishikawa, M., Jpn. J. Appl. Phys. 35, L1315 (1996).10.1143/JJAP.35.L1315Google Scholar
[6] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 4056 (1997).Google Scholar
[7] Cree research Inc. PR Newswire. July 29 (1997).Google Scholar
[8] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Proceedings of the Second International Conference on Nitride Semiconductors (1997) S–1.Google Scholar
[9] Sugiura, L., Appl. Phys. Lett., 70, 1317 (1997).Google Scholar
[10] Sugiura, L., (unpublished)Google Scholar
[11] Nunoue, S., Yamamoto, M., Suzuki, M., Nozaki, C., Nishio, J., Sugiura, L., Onomura, M., Itaya, K. and Ishikawa, M., Extended Abstracts of the 1997 Int. Conf. on Solid State Devices and Materials, Hamamatsu, 1997, pp.218–219.Google Scholar
[12] Sugiura, L., J. Appl. Phys. 81, 1633 (1997).10.1063/1.364018Google Scholar
[13] Maeda, K. and Takeuchi, S., Dislocations in Solids, edited by Suzuki, H. (University of Tokyo Press, Tokyo 1985), p. 433.Google Scholar
[14] Fukuda, M., Wakita, K., and Iwane, G., J. Appl. Phys. 54,1246(1983).10.1063/1.332186Google Scholar
[15] Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett. 66,1249 (1995).Google Scholar
[16] Ponce, F. A., Proceedings of International Symposium on Blue Laser and Light Emitting Diodes, p225–229, Chiba Univ., Japan, March (1996).Google Scholar
[17] Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G., and Erikson, H. I., Appl. Phys. Lett. 70, 420 (1997).10.1063/1.118322Google Scholar
[18] Qian, W., Rohrer, G. S., Skowronski, M., Doverspike, K., Rowland, L. B., and Gaskill, D. K., Appl. Phys. Lett. 67, 2284 (1995).10.1063/1.115127Google Scholar
[19] Osinski, M. and Barton, D. L.: Proceedings of International Symposium on Blue Laser and Light Emitting Diodes, Chiba Univ., Japan, 1996. p217–224.Google Scholar
[20] Sasaoka, C., Sunakawa, H., Kimura, A., Nido, M. and Usui, A., Proceedings of the Second International Conference on Nitride Semiconductors (ICNS'97)(1997) S–1.Google Scholar
[21] Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112(1989).Google Scholar
[22] Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys. 31, L139(1992).Google Scholar
[23] Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258(1992).10.1143/JJAP.31.1258Google Scholar
[24] Gotz, W., Johnson, N. M., Walker, J., Bour, D. P., Amano, H. and Akasaki, I., Appl. Phys. Lett. 67, 2666(1995).10.1063/1.114330Google Scholar