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Non-destructive, In-line Characterization of Shallow Junction Processes

Published online by Cambridge University Press:  17 March 2011

G. Jonathan Kluth,
Laurie Bechtler,
Peter Borden and
Jian Mi
G. Jonathan Kluth
Affiliation:
Advanced Micro Devices, Inc. Sunnyvale, CA 94088
Laurie Bechtler
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025
Peter Borden
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025
Jian Mi
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025
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Abstract

This paper describes the application of a novel optical metrology tool to in-line monitoring of shallow junction processes in a production setting. Recent results demonstrate the sensitivity of junction depth to implant dose and energy, as well as to annealing temperature and time. Results are also presented on monitoring of amorphizing implants and low dose implants. The in-line measurement has been performed on both bare wafers and product wafers. Measurements are compared with results obtained by destructive techniques such as SIMS and SRP. These results demonstrate that the optical method has the capability to provide in-line control of shallow junction processes.

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References

[1] Borden, Peter, Nijmeijer, Regina, and Lingel, Karen, “Non destructive profile measurements of annealed shallow implants”. Mat. Res. Soc. Proc. 1999, in press.10.1557/PROC-568-239Google Scholar