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Nonstoichiometric Defects in Semiconductor SnTe Thin Films

Published online by Cambridge University Press:  26 February 2011

O. N. Nashchekina,
E. I. Rogacheva,
L. P. Shpakovskaya,
V. I. Pinegin and
A. I. Fedorenko
O. N. Nashchekina
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
E. I. Rogacheva
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
L. P. Shpakovskaya
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
V. I. Pinegin
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
A. I. Fedorenko
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
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Abstract

The mono- and polycrystalline films of the SnTe1+x semiconducting phase with controlled content of nonstoichiometric defects (NSD) were grown by thermal evaporation and hot wall epitaxy methods from the charges of different composition. The concentration of NSD was determined using X-Ray diffraction method and the measurements of carrier density. The temperature dependences of electrical conductivity and Hall coefficient were obtained in the temperature range of 77 - 300 K. The best results were obtained for hot wall epitaxy method: the perfect monocrystalline films with NSD content corresponding to x =0-0,025 and high mobility of charge carriers were grown.

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References

1. Lin, J.C., Ngai, T.L., Chang, A., Metallurgical Transactions. 17A, 1241 (1986)Google Scholar
2. Ota, Y., Rabii, S., J Non-metals. 1, 117 (1973)Google Scholar
3. Allgaier, R.S. and Houtson, B., J. Appl. Phys. 49, 442 (1978)Google Scholar
4. Haman, T.C., Physics of IV-VI Compounds and Alloys, edited by Rabii, S. (Gordon & Breach, London, 1971), p. 141 Google Scholar
5. Brebrick, R.F., J. Phys. and Chem Solids. 24, 27 (1963); 32, 551 (1971)Google Scholar
6. Rogacheva, E.I., Gorne, G.V., Zhigareva, N.K. and Ivanova, A.B., Izv.AN SSSR. Ser.Neorgan. Materialy. 27, 267(1991).Google Scholar
7. Bylander, E.G., Mater. Sci. Engin. 1, 190 (1966).Google Scholar
8. Zemel, J.N., Jensen, J.D. and Schoolar, R.B., Phys. Rev. 140, A330(1965).Google Scholar
9. Nishiyama, A., J. Phys. Soc. Jap. 40, 471(1976).Google Scholar
10. Dawar, A.L., Mathur, P.C., Mohammed, A.O. and Taneja, O.P., Thin Solid Films. 82, 273(1981).Google Scholar
11. Santhanam, S., Samantapay, B.K., and Chaudhri, A.K., J.Phys. C15, 2531(1982).Google Scholar
12. Freik, D.M., Galushchak, M., and Avgustimov, V.L., Inorg. Mater. 13, 1382(1977).Google Scholar
13. Ganesan, N. and Sivaramakrishnan, V., Phys. Stat. Sol.(a) 105, 461(1988).Google Scholar
14. Sokolov, Yu.V., Oszwaldowski, M. and Shveytser, H., Izv. AN SSSR, Ser. Neorgan. Mater. 27, 152(1991).Google Scholar