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A Novel Method for the growth of Low Temperature Silicon Structures for 3-D Flash Memory Devices

Published online by Cambridge University Press:  01 February 2011

Thomas A Mih,
Richard BM Cross and
Shashi Paul
Thomas A Mih
Affiliation:
thomas.mih@email.dmu.ac.uk, De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
Richard BM Cross
Affiliation:
rcross@dmu.ac.uk, De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
Shashi Paul
Affiliation:
spaul@dmu.ac.uk, De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
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Abstract

Low temperature (≤400°C) growth of polycrystalline silicon (poly-Si) is carried out using plasma-enhanced chemical vapour deposition. After an initial preparation step poly-Si was grown on the substrates. Optical band gap studies of the poly-Si films have been correlated to hydrogen content of the films as well as to their photoconductivity. Furthermore, the suitability of these films for use as information storage materials for future generation 3-D flash memory devices is investigated using capacitance-voltage (C-V) measurements via metal-insulator-semiconductor device structures. C-V analysis indicates strong charge storage behavior for the poly-Si films.

Keywords

memorysemiconductingplasma-enhanced CVD (PECVD) (chemical reaction)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1112: Symposium E – Materials and Technologies for 3-D Integration , 2008, 1112-E05-03
Copyright
Copyright © Materials Research Society 2009

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References

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