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Novel Mocvd Processes for Nanoscale Oxide Thin Films

Published online by Cambridge University Press:  10 February 2011

Tingkai Li,
Pete Zawadzkp,
Richard A. Stall,
Yongfei Zhu and
Seshu B. Desu
Tingkai Li
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873, TingLi@emcore.com
Pete Zawadzkp
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873, TingLi@emcore.com
Richard A. Stall
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873, TingLi@emcore.com
Yongfei Zhu
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873, TingLi@emcore.comDepartment of Materials Science and Engineering, VPI&SU, Blacksburg, VA 24060
Seshu B. Desu
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873, TingLi@emcore.com
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Abstract

Nanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996, 315
Copyright
Copyright © Materials Research Society 1997

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