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Nucleation Phenomena during Titanium Silicon Reaction

Published online by Cambridge University Press:  25 February 2011

Ivo J.M.M. Raaijmakers,
Leo J. van Ijzendoorn,
Anton M.L. Theunissen and
Ki-Bum Kim
Ivo J.M.M. Raaijmakers
Affiliation:
Philips Research Laboratories, P.O. Box 3409, Sunnyvale CA 94088
Leo J. van Ijzendoorn
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
Anton M.L. Theunissen
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
Ki-Bum Kim
Affiliation:
Philips Research Laboratories, P.O. Box 3409, Sunnyvale CA 94088
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Abstract

It is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.

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References

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