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On the Defect Structure of Grain Boundaries in Ba2YCu3O7−x

Published online by Cambridge University Press:  28 February 2011

S. Nakahara,
G. J. Fisanick,
M. F. Yan,
R. B. Van Dover,
T. Boone and
R. Moore
S. Nakahara
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
G. J. Fisanick
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
M. F. Yan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. B. Van Dover
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
T. Boone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. Moore
Affiliation:
Perkin-Elmer Physical Electronics, 5 Progress St., Edison, NJ 08820
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Abstract

Correlations between observed defect structures and the orientation of planes involved in grain boundary (GB) formation in single phase, near ideal density orthorhombic Ba2YCu3O7−x are presented. Coherent boundaries involving only a low energy network of dislocations at the interface are associated with boundaries not involving the (001) basal plane, while basal-plane-faced GBs are highly defective. These results are interpreted using a model for local stress based on the known anisotropie thermal contraction of the material during cooling from sintering temperatures. Scanning Auger microscopy of in situ fractured surfaces demonstrates that there is preferential segregation of carbon at the GBs as well.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987, 575
Copyright
Copyright © Materials Research Society 1988

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References

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