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Optical Microanalysis of Small Semiconductor Structures*

Published online by Cambridge University Press:  15 February 2011

D. V. Murphy and
S. R. J. Brueck
D. V. Murphy
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
S. R. J. Brueck
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
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Abstract

Raman spectroscopy is a powerful tool for evaluating semiconductor crystal characteristics with a diffraction–limited spatial resolution of approximately 0.5 μm, comparable to device structure dimensions. Examples are presented of the use of Raman scattering to measure stress variations across Sion-insulator and Si-on-sapphire stripes with dimensions down to 2 μm and, to probe the spatial variation in the effectiveness of annealing of a Si layer deposited over metal device structures. Detailed measurements of the variation in the Raman spectra of thin crystalline Si films, with thicknesses down to 3.0 nm, are discussed. Measurements made on roughened Si surfaces are presented which show that surface morphology on a submicron spatial scale results in enhanced Raman intensities.

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Footnotes

*

This work was supported by the Department of the Air Force, in part with specific funding from the Air Force Office of Scientific Research.

References

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