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Optical Properties of Semiconducting Silicides

Published online by Cambridge University Press:  03 September 2012

H. Lange,
W. Henrion,
E. Jahne,
M. Giehler,
O. GÜnther and
J. Schumann
H. Lange
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
W. Henrion
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
E. Jahne
Affiliation:
Paul-Drude-Institut fur FestkOrperelektronik, Hausvogteiplatz 5-7, D-10 117 Berlin, Germany
M. Giehler
Affiliation:
Paul-Drude-Institut fur FestkOrperelektronik, Hausvogteiplatz 5-7, D-10 117 Berlin, Germany
O. GÜnther
Affiliation:
Paul-Drude-Institut fur FestkOrperelektronik, Hausvogteiplatz 5-7, D-10 117 Berlin, Germany
J. Schumann
Affiliation:
Institut fur Festkörper- und Werkstofforschung Dresden e. V., D-01 171 Dresden, Germany
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Abstract

The optical properties of polycrystalline layers of CrSi2, MnSi1.73, β-FeSi2, and Ir3Si5 prepared by single layer and codeposition methods on different substrates are measured over the spectral range from the infrared to 24 eV. The spectral features in the interband region are attributed to transitions between Si p-metal d bonding and antibonding states mediated by energy dependent matrix elements. The IR spectra of CrSi2 and β-FeSi2, exhibiting six phonon modes, are simulated by an oscillator model.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993, 479
Copyright
Copyright © Materials Research Society 1994

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References

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