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Optimization of Pecvd Sin Films Using A Statistically Designed Experiment

Published online by Cambridge University Press:  10 February 2011

Steven K. Brierley,
Thomas E. Kazior and
Lan Nguyen
Steven K. Brierley
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
Thomas E. Kazior
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
Lan Nguyen
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
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Abstract

A statistically designed experiment was run to optimize the deposition of PECVD SiN on GaAs substrates. Five deposition parameters were varied: RF power, temperature, pressure, plasma frequency, and ammonia/silane ratio. Four film properties were used to evaluate the quality of the nitride: the fraction of hydrogen bound to nitrogen atoms, the index of refraction (and its uniformity), thickness uniformity, and stress. From the screening phase of the experiment, it was determined that only the plasma frequency and ammonia/silane ratio influenced the quality of the nitride film. High frequency deposition was preferable to low frequency deposition since it resulted in lower film stress. The results of the optimization phase showed that SiN films with near‐zero stress, low N‐H bond density and good index of refraction could be obtained by deposition at a very low ammonia/silane ratio.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996, 121
Copyright
Copyright © Materials Research Society 1997

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