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Optimization of Reactive Ion Etching Parameters Via Material Characterization

Published online by Cambridge University Press:  26 February 2011

M. W. Cole,
C. B. Cooper,
M. Dutta,
C. S. Wrenn,
S. Saliman,
H. S. Lee,
L. Fotiadis,
M-L. Saunders and
W. H. Chang
M. W. Cole
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
C. B. Cooper
Affiliation:
Varian Research Center, Palo Alto, Ca.,94303
M. Dutta
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
C. S. Wrenn
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
S. Saliman
Affiliation:
Varian Research Center, Palo Alto, Ca.,94303
H. S. Lee
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
L. Fotiadis
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
M-L. Saunders
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
W. H. Chang
Affiliation:
US Army ETDL, Ft. Monmouth, N.J. 07703
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Abstract

This study evaluates variations in SiCl4 reactive ion etching (RIE) process parameters in order to optimize the fabrication of lateral quantum well arrays (QWA) used in III–V semiconductor laser and detector designs. Since fabrication involves MBE regrowth on SiCl4 etched surfaces, material quality of both the etched surface and GaAs regrowth are evaluated. The variation of RIE parameters involved power levels, DC bias and etch times (10 Watts, -30V, 8 min.; 25 Watts, -100V, 5 min.; 95 Watts,-340V, 2 min.) while material removal was held constant (400nm). Evaluation of the etched surfaces revealed that the lattice damage depth exceeded lOOnm for all power levels. The extent of disorder beneath the etched surface was less for the low power long etch time. Etching at higher power levels for shorter time periods resulted in smoother surfaces and enhanced electrical characteristics, which in turn yielded a higher quality GaAs regrowth region. For the RIE parameters examined in this study, the variation in defect densities seemed to have a lesser effect on device performance as compared to the extreme differences in surface morphologies. Thus, for the parameters evaluated in this work, we suggest that QWA fabrication is optimized via SiClif RIE at the high power level for a short time period.

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References

1. Burton, R.M, Gottscho, R.A. and Smolinsky, G., Drv Etching for Microelectronics, (Elsevier, NY, 1984) p81.Google Scholar
2. Sato, M. and Nakamura, H., J. Vac Sci. Technol. 20, 186 (1982).Google Scholar
3. Stern, M.B. and Liao, P.F., J. Vac. Sci. Technol. B1, 1053 (1983).Google Scholar
4. Iafrate, G.J., Ferry, D.K. and Reich, R.K., Surface Sci. 113, 485 (1982).Google Scholar
5. Rossabi, J., Dutta, N., Cole, M.W., and Smith, D.D., SPIE 1186 (1989).Google Scholar
6. Cole, M.W., Dutta, M., Rossabi, J., Smith, D.D and Lehman, J.L., in impurities. Defects & Difusion in Semiconductors: Bulk & Laveded Structures, edited by Wolford, D.J., Bernhole, J., Haller, E.E. (Mater. Res. Soc. Proc. 163, Pittsburg, Pa. 1989) pp. 987–992.Google Scholar
7. Kirillov, D., Cooper III, C.B. and Powell, R.A., J. Vac. Sci. Technol. B4. 1316 (1986).Google Scholar
8. Salimian, S., Cooper III, C.B. and Day, M.E., J. Vac. Sci Technol. B5. 1606 (1987).Google Scholar
9. Lisham, D.G., Wong, H.F., Green, D.L., Hu, E.L., Merz, J.L. and Kirillov, D., J. Vac. Sci. Technol. B7 556 (1989).Google Scholar
10. Roughani, B., Jackson, H.E., Jbara, J.J., Mantei, T.D., Hickman, G., Stutz, C. E., Evans, K.R. and Jones, R.L., IEEE J. Quantum Electronics 25., 1003 (1989).Google Scholar
11. Pang, S.W., J. Electrochem. Soc. 133 784 (1986).Google Scholar