Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T06:33:14.296Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic Field-Effect Transistors, Inverters, and Logic Circuits on Gate Electrets

Published online by Cambridge University Press:  01 February 2011

Cheng Huang,
James E. West and
Howard E. Katz
Cheng Huang
Affiliation:
chuang31@jhu.edu, Johns Hopkins University, Materials Science &Engineering Department, 102 Maryland Hall, 3400 N. Charles St., Baltimore, MD, 21218, United States, 4105160567, 4105165293
James E. West
Affiliation:
jimwest@jhu.edu, Johns Hopkins University, Electrical and Computer Engineering Department, United States
Howard E. Katz
Affiliation:
hekatz@jhu.edu, Johns Hopkins University, Materials Science & Engineering Department, United States
Get access

Abstract

By incorporating dielectrics with stored electric fields and organic semiconductors, new organic electronic components such as circuits with controlling voltages “restored” for transistor tuning can be developed. We have successfully used excellent electret materials including charged and surface-treated silicon dioxide (SiO2) and silsesquioxane (SSQ) polymers as the dielectric layer in organic field-effect transistors (OFETs). Charge injection and quasipermanent charge storage induce threshold voltage shifts and current modulation, which results from the built-in electric fields in the conduction channels. Static and dynamic characteristics of organic thin-film transistors (OTFTs) such as charging conditions and voltage/current retention were evaluated. In addition, self-assembled monolayers (SAMs) of dipolar molecules have been utilized in the dielectric layer, with different mechanisms but similar effects compared to charged dielectrics. We also present new OFET unipolar inverters, comprised of only two simple OTFTs with enhancement-mode driver and depletion-mode load to implement full-swing organic logic circuits for process simplification of electronic components in organic electronics.

Keywords

electronic structuresemiconductingdielectric

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 889: Symposium W – Electroresponsive Polymers and Their Applications , 2005, 0889-W08-07
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Facchetti, A., Yoon, M.-H., and Marks, T. J., Adv. Mater. 17, 1705 (2005).Google Scholar
2. Sirringhaus, H., Adv. Mater. 17, 2411 (2005).Google Scholar
3. Katz, H.E., Hong, X.M., Dodabalapur, A., and Sarpeshkar, R., J. Appl. Phys. 91, 1572 (2002).Google Scholar
4. Mushrush, M., Facchetti, A., Lefenfeld, M., Katz, H.E., and Marks, T.J., J. Am. Chem. Soc. 125, 9414 (2003).Google Scholar
5. Schwödiquer, R., Bauer, S., Singh, B., Marjanovic, N., and Sariciftci, N.S., IEEE Proc. of 12th Int'l Symp. on Electrets (ISE 12), 459 (2005), and references therein.Google Scholar
6. Sessler, G.M. (ed.), Electrets 3rd Edition (Laplacian Press, CA, 1998), vol. 1.Google Scholar
Gerhard-Mulhaupt, R. (ed.), Electrets 3rd Edition (Laplacian Press, CA, 1999), vol. 2.Google Scholar
7. Nalwa, H.S. (ed.), Ferroelectric Polymers: Chemistry, Physics, and Applications (M. Dekker, Inc., New York, 1995).Google Scholar
8. Scott, J.F., Ferroelectrics Reviews (eds: Taylor, G.W. and Bhalla, A.S), 1, 1 (1998);Google Scholar
Scott, J. F., Ferroelectric Memories (Springer, Berlin, 2000).Google Scholar
9. Naber, R.C.G., et al. , Nature Material 4, 243 (2005).Google Scholar
10. Sedra, A.S. & Smith, K.C. Microelectronic Circuits (Oxford University Press, London, 2003).Google Scholar
11. Sze, S.M. Physics of Semiconductor Devices (Wiley, New York, 1981).Google Scholar
12. Knipp, D., Street, R.A., Völkel, A., and Ho, J., J. Appl. Phys. 93, 347(2003).Google Scholar
13. Salleo, A., Endicott, F., and Street, R.A., Appl. Phys. Lett. 86, 263505 (2005).Google Scholar
14. Katz, H.E. and Huang, C., Process for Polarized-gate Semiconductor Device, US Provisional Patent, 4822 (2005).Google Scholar
15. Sessler, G.M. and West, J.E., J. Appl. Phys. 43, 933 (1972).Google Scholar
16. Jacobs, H.O. and Whitesides, G.M., Science 291, 1763 (2001).Google Scholar
17. Bao, Z.N., Kuck, V., Rogers, J.A., Paczkowski, M.A., Adv. Funct. Mater. 12, 526 (2002).Google Scholar
18. Brown, A.R., Pomp, A., Hart, C.M., and de Leeuw, D.M., Science 270, 972 (1995);Google Scholar
Brown, A.R., Jarrett, C.P., de Leeuw, D.M., and Matters, M., Synthetic Metals 88, 37 (1997).Google Scholar
19. Klauk, H., Gundlach, D.J., and Jackson, T.N., IEEE Electron Device Letters 20, 289 (1999).Google Scholar
20. Gelinck, G.H., et al. , Nature Materials 3, 106 (2004).Google Scholar
21. Pernstich, K. P., Haas, S., Oberhoff, D., Goldmann, C., Gundlach, D. J., Batlogg, B., Rashid, A.N., and Schitter, G., J. Appl. Phys. 96, 6431 (2004).Google Scholar
22. Huang, C., Ph.D. Thesis, The Pennsylvania State University (2004).Google Scholar
23. Huang, C., Ren, K., Zhang, S., Xia, F., Zhang, Q.M., and Li, J., IEEE Proc. of 12th Int'l Symp. on Electrets (ISE 12), 91 (2005).Google Scholar
24. Huang, C. and Zhang, Q.M., in Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology (ed: Varadan, V.K.), Proc. of SPIE, vol. 5389, 274 (2004);Google Scholar
Huang, C., Bai, B., Chu, B., Ding, J., and Zhang, Q.M., Mat. Res. Soc. Symp. Proc. vol. 820, O8.12(1–6) (2004).Google Scholar
25. Carpi, F. and De Rossi, D., IEEE Trans. Inf. Technol. Biomed. 9, 295 (2005).Google Scholar