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Paramagnetic Nitrogen Defects in Silicon Nitride

Published online by Cambridge University Press:  22 February 2011

W. L. Warren,
J. Kanicki,
J. Robertson and
E. H. Poindexte
W. L. Warren
Affiliation:
Sandia National Laboratories, Glass and Electronic Ceramics Department Albuquerque, NM 87185
J. Kanicki
Affiliation:
Sandia National Laboratories, Glass and Electronic Ceramics Department Albuquerque, NM 87185
J. Robertson
Affiliation:
Sandia National Laboratories, Glass and Electronic Ceramics Department Albuquerque, NM 87185
E. H. Poindexte
Affiliation:
Sandia National Laboratories, Glass and Electronic Ceramics Department Albuquerque, NM 87185
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Abstract

The photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiNx:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiNx:H films often become conducting following a high post-deposition anneal.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992, 101
Copyright
Copyright © Materials Research Society 1993

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References

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