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Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

Published online by Cambridge University Press:  25 February 2011

K. K. Bourdelle and
D. O. Boerma
K. K. Bourdelle
Affiliation:
Nuclear Solid State Physics, Materials Science Centre, Groningen University, Nijen- borgh 4, 9747 AG Groningen, The Netherlands
D. O. Boerma
Affiliation:
Nuclear Solid State Physics, Materials Science Centre, Groningen University, Nijen- borgh 4, 9747 AG Groningen, The Netherlands
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Abstract

Ni foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

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