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Parametric Study of Zone-Melting-Recrystallization Processing of Silicon on Insulator Structures

Published online by Cambridge University Press:  25 February 2011

Joseph Lipman,
Ioannis N. Miaoulis and
James S. Im
Joseph Lipman
Affiliation:
Mechanical Engineering Department, Tufts University, Medford, MA 02155
Ioannis N. Miaoulis
Affiliation:
Mechanical Engineering Department, Tufts University, Medford, MA 02155
James S. Im
Affiliation:
Materials Science and Engineering Department. M.I.T., Cambridge, MA 02139
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Abstract

The effects of four thermal parameters on the temperature distribution during Zone-Melting-Recrystalllzation processing of Slllcon-On-Insulator devices with graphite strip as the heat source were investigated numerically. Results indicate that the convective heat losses, the variability of the thermal conductivity of silicon as a function of temperature, and the multilayer nature of the structure do not affect the temperature distribution significantly. However, the velocity of the graphite strip can significantly affect the temperature distribution. The temperature profile remains the same for graphite strip velocities below 0.03 cm/sec. The relationship between required graphite strip temperature and velocity of the strip for film melting to occur is presented in graphical form.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989, 473
Copyright
Copyright © Materials Research Society 1990

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References

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