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Performance modification in solution-processed SnZnO thin film transistor

Published online by Cambridge University Press:  17 April 2019

Dong Lim Kim,
Doo Na Kim,
You Seung Rim,
Si Joon Kim and
Hyun Jae Kim
Dong Lim Kim
Affiliation:
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Republic of Korea
Hyun Jae Kim
Affiliation:
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Republic of Korea
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Abstract

Tin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

Keywords

ZnSnsol-gel

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