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The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector

Published online by Cambridge University Press:  22 February 2011

Z. J. Radzimski,
S. Yokoyama,
K. Ishibashi and
M. Hirose
Z. J. Radzimski
Affiliation:
Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, USA
S. Yokoyama
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi Hiroshima 724, Japan
K. Ishibashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi Hiroshima 724, Japan
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Abstract

Medium-energy ion spectroscopy using a conventional ion implanter has been developed to study the properties of semiconductor subsurface regions. The system is equipped with solid state detector and operaties with He+ ion energy up to 200 keV. We have tested the system performance for various applications, such as, silicon diffusion through a thin Au layer, a low dose, low energy As implantion and damage of silicon surface caused by plasma treatment.

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