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Phase Separation in InGaN/GaN Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

M. D. Mccluskey,
L. T. Romano,
B. S. Krusor,
D. P. Bour,
C. Chua,
N. M. Johnson and
Kin Man Yu
M. D. Mccluskey
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
B. S. Krusor
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
C. Chua
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, mccluske@ parc.xerox.com
Kin Man Yu
Affiliation:
Lawrence Berkeley National Laboratory, MS 2-200, 1 Cyclotron Rd., Berkeley, CA 94720
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Abstract

Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997, 985
Copyright
Copyright © Materials Research Society 1998

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