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Phase Transformations in a-Si/Ni/C-Si Structures with Different Interfacial Ni Layer Thicknesses

Published online by Cambridge University Press:  21 February 2011

A.Yu. Kuznetsov,
I. I. Khodos,
J. Linnros,
B. Mohadjeri,
E. V. Monakhov and
B. G. Svensson
A.Yu. Kuznetsov
Affiliation:
Institute of Microelectronics Technology, Chernogolovka, Moscow Region, 142432, Russia
I. I. Khodos
Affiliation:
Institute of Microelectronics Technology, Chernogolovka, Moscow Region, 142432, Russia
J. Linnros
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. 1298, S-164 28 Kista-Stockholm, Sweden
B. Mohadjeri
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. 1298, S-164 28 Kista-Stockholm, Sweden
E. V. Monakhov
Affiliation:
Institute of Nuclear Physics, Moscow State University, 119899 Moscow, Russia
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. 1298, S-164 28 Kista-Stockholm, Sweden
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Abstract

Planar low-temperature solid phase epitaxy of amorphous silicon in a-Si/10nmNiSi/c-Si structure was observed. The crystallization rate is well described by the arrhenius-type expression with the activation energy and preexponencial factor deduced from our measurements of 1.7 eV and 2.4×1012 nm/min, respectively. NiSi2 formation at the NiSi2/a-Si interface is believed to be the limiting stage of the transformation. The structures with thicker Ni-reached interfacial layer perform much poorer a-Si epitaxy.

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References

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