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Phosphorus Diffusion in Polycrystalline Silicon: Monte Carlo Simulation of Experimental Diffusion Profiles

Published online by Cambridge University Press:  22 February 2011

J. P. Lavine,
S.-T. Lee,
D. L. Black,
D. L. Losee and
C. M. Jarman
J. P. Lavine
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
S.-T. Lee
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
D. L. Black
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
D. L. Losee
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
C. M. Jarman
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
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Abstract

Phosphorus ions were implanted into silicon layers deposited by low pressure chemical vapor deposition onto thermally oxidized silicon substrates. Thermal anneals diffused the phosphorus and the resulting depth profiles were determined by secondary-ion mass spectrometry (SIMS). Transmission electron microscopy shows that the polysilicon layers have a multi-layer pattern of grains. The phosphorus profiles are fit by a Monte Carlo simulation technique that includes both grain and grain-boundary diffusion. The grain-boundary diffusion coefficient is found to be thermally activated with an activation energy of 3.3 eV.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987, 39
Copyright
Copyright © Materials Research Society 1988

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References

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