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Photoemitters Based on Glass - ITO Structures

Published online by Cambridge University Press:  10 February 2011

J. Olesik
J. Olesik*
Affiliation:
Institute of Physics, Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, 42–201 Czqstochowa, Poland
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Abstract

The sample was a silicon glass with conducting films (ITO) evaporated by reactive ion sputtering on its both sides. The internal electric field was created by applying a negative polarizing voltage Upol, to field electrode. The investigations were performed in the vacuum of the order 10−6 Pa. As a result of applying Upol and illumination, photoelectrons are released and enter electron multiplier. The electrons create voltage pulses in the multiplier which are recorded in the multichannel pulse amplitude analyzer. The amplitude spectra were measured for unilluminated samples and illuminated by a quartz lamp.

Energy analysis of emitted electrons was performed by the retarding field method. Measurements of electrons energy in field induced emission showed that about 80% o electrons have energy up to 10 eV but some electrons of higher energy are also detected. The described effects can be modeled with support of the electron effects occurring during the intrinsic discharges in gases. Theoretical molecular dynamics simulations have shown that SnO4 tetrahedral interacting with SiO4 clusters of the glass substrate play central role in the observed nonlinear photoinduced changes.

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