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Physics and Control of Si/Ge Heterointerfaces

Published online by Cambridge University Press:  03 September 2012

S. Fukatsu,
N. Usami,
H. Sunamura,
Y. Shiraki and
R. Ito
S. Fukatsu
Affiliation:
Department of Pure and Applied Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153, Japan, fkatz@srv.bme.rcast.u-tokyo.ac.jp
N. Usami
Affiliation:
RCAST, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
H. Sunamura
Affiliation:
RCAST, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Shiraki
Affiliation:
RCAST, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
R. Ito
Affiliation:
Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Abstract

We describe physics and control of Si/SiGe heterointerfaces. A clear distinction will be made between the vertical and lateral effects of the Si/SiGe interface from the viewpoint of interface engineering. Ge surface segregation during nonequilibrium MBE growth and surfactant-mediated-growth are highlighted as prominent examples for the vertical effects while interface microroughness is addressed for the lateral effects. The influence of the interface effects on radiative recombination of indirect excitons is described in the context of SiGe-based optoelectronic applications.

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