Hostname: page-component-7b7567c8c-jswmv Total loading time: 0 Render date: 2026-11-15T18:27:35.612Z Has data issue: false hasContentIssue false
  • English
  • Français

The Physics of Metal Base Transistors

Published online by Cambridge University Press:  28 February 2011

E. Rosencher,
F. Arnaud D'Avitaya,
P.A. Badoz,
C. d'Anterroches,
G. Glastre,
G. Vincent and
J.C. Pfister
E. Rosencher
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
F. Arnaud D'Avitaya
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
P.A. Badoz
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
C. d'Anterroches
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
G. Glastre
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
G. Vincent
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
J.C. Pfister
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du Vieux Chêne - 38243 MEYLAN CEDEX - FRANCE
Get access

Abstract

Epitaxial Si/CoSi2/Si structures can be grown under ultra-high vacuum conditions. The metallic CoSi2 films can be extremely thin typically between 1 nm and 20 nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal ilm. The influence of pinholes in the CoSi2 layers will be discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987, 415
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Saitoh, S., Ishiwara, H., Furukawa, S. : Appl. Phys. Lett. 37, 203 (1980).Google Scholar
[2] Bean, J.C., Poate, J.M. : Appl. Phys. Lett. 37, 643 (1980).Google Scholar
[3] Ishizaka, A., Nakagawa, K., Shiraki, Y. : In Proceedings of the Symposium on molecular beam epitaxy and clean surface techniques, (The Japan Society of Appl. Phys., Tokyo, 1982), p. 183.Google Scholar
[4] Arnaud d'Avitaya, F., Delage, S., Rosencher, E., Derrien, J. : J. Vac. Sci. Technol. B 3, 770 (1985).Google Scholar
[5] Rosencher, E., Delage, S., Arnaud d'Avitaya, F. : J. Vac. Sci. Technol. B 3, 762 (1985).Google Scholar
[6] Ishibashi, K., Furukawa, S. : Appl. Phys. Lett. 43, 660 (1983).Google Scholar
[7] Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowalter, L.S., Okamoto, M., Hashimoto, S. : In Proceedings of the MRS Conference, 37, “Layer Structures, epitaxy and Interfaces”, Ed. Gibson, J.M. and Dawson, L R., p. 131.Google Scholar
[8] d'Anterroches, C., Arnaud d'Avitaya, F. : Thin Solid Films 137, 351 (1986).Google Scholar
[9] Rosencher, E., Badoz, P.A., d'Anterroches, C., Glastre, G., Vincent, G., Arnaud d'Avitaya, F. (to be published).Google Scholar
[10] Tung, R.T., Levi, A.F.J., Gibson, J.M. : Appl. Phys. Lett. 48, 635 (1986).Google Scholar
[11] Arnaud d'Avitaya, F., Chroboczek, J.A., Glastre, G., Campidelli, Y., Rosencher, E. : J. of Crystal Growth (to be published).Google Scholar
[12] Hensel, J.C., Tung, R.T., Poate, J.M., Unterwald, F.C. : Phys. Rev. Lett. 54, 1840 (1985).Google Scholar
[13] Badoz, P.A, Briggs, A., Raiencher, E., Arnaud d'Avitaya, F. (to be published).Google Scholar
[14] Madar, R., Briggs, A. (to be published).Google Scholar
[15] Rosencher, E., Badoz, P.A., Briggs, A., Campidelli, Y., Arnaud d'Avitaya, F. : In Proceedings of the first international symposium of silicon molecular beam epitaxy, ed. Bean, J.C., The Electrochemical Society, Vol. 85–7, p. 268 (1985).Google Scholar
[16] Rosencher, E., Delage, S., Campidelli, Y., Arnaud d'Avitaya, F. Electron. Letters 20, 762 (1984).Google Scholar
[17] Rosencher, E., Delage, S., Arnaud d'Avitaya, F., d'Anterroches, C., Belhaddad, K., Pfister, J.C. : Physica B 134, 106 (1985).Google Scholar
[18] Hensel, J.C., Levi, A.F., Tung, R.T., Gibson, J.M. : Appl. Phys. Lett. 47, 151 (1985). See also Ref. 10.Google Scholar
[19] Rmencher, E., Badoz, P.A., Pfister, J.C., Arnaud d'Avitaya, F., Vincent, G., Delage, S. : Appl. Phys. Lett. 49, 271 (1986).Google Scholar
[20] Pfister, J.C., Rosencher, E., Belhaddad, K., Poncet, A. : Solid State Electron. 29, 907 (1986).Google Scholar
[21] Sze, S.M. : In Physics of Semiconductor Devices, (Wiley-Interscience, New York, 1969) Chap. 11.Google Scholar
[22] Badoz, P.A., Ramencher, E., Delage, S., Vincent, G., Arnaud d'Avitaya, F.: In Proceedings of the 18th International Conference of Physics of Semiconductors 1986 Stockholm) (to be published).Google Scholar
[23] Marty., A., Clarac, J., Bailbe, J.P., Rey, G. : IEE Proc. 130, 24 (1983).Google Scholar
[24] Lindmayer, J. : Proc. IEEE, 1751 (1964).Google Scholar
[25] Bozler, C.O., Alley, G.D. : IEEE Trans. Electron Devices 27, 1128 (1980).Google Scholar
[26] Inhibashi, K., Furukawa, S. : IEEE Trans. on Electron Devices 33, 322 (1986).Google Scholar
[27] Rosencher, E., Glastre, G., Vincent, G., Vareille, A., Arnaud d'Avitaya, F. Electron. Letters 22, 699 (1986).Google Scholar