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Plasma Ion Implantation for Flat Panel Displays

Published online by Cambridge University Press:  03 September 2012

Chung Chan
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Shu Qin
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Yuanzhong Zhou
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Wei Liu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Shuichi Wu
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Mankuan Michael Vai
Affiliation:
Northeastern University, Department of Electrical and Computer Engineering, Boston, MA 02115, shuqin@neu.edu
Ionel Bursuc
Affiliation:
Waban Technology, Inc., One DeAngelo Drive, Bedford, MA 01730
Jiqun Shao
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
Stuart Denholm
Affiliation:
Eaton Corp., Semiconductor Equipment Operations, 108 Cherry Hill Drive, Beverly, MA 01915
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Abstract

Development of ion doping and hydrogenation equipment using plasma ion implantation (PII) is being studied. It is shown that low energy, high throughput operation could eliminate problems associated with etching, charging, cooling, and contamination. The applications of a new plasma source and neural network implementation optimization are also reported.

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