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Point Defects, Dislocations in GaAs and Material Homogeneity

Published online by Cambridge University Press:  26 February 2011

J. C. Bourgoin,
H. J. von Bardeleben,
H. Lin and
D. Stievenard
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, C.N.R.S. °, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
H. J. von Bardeleben
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, C.N.R.S. °, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
H. Lin
Affiliation:
Department of Electronic Engineering, Ajou University, Suwon, 170, Korea
D. Stievenard
Affiliation:
Département de Physique des Solides, Institut Supérieur d'Éectronique du Nord, 41 boulevard Vauban, 59046 Lille Cedex, France
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Abstract

Combined positron annihilation and differential thermal analysis have shown that, in bulk GaAs materials, dislocations are decorated with vacancy related defects which recombine with As interstitials originating from As clusters. The role of these dislocations, the role of As source of these clusters are described and the consequences on the material homogeneity discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 411
Copyright
Copyright © Materials Research Society 1988

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References

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