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Polycrystalline Silicon in ULSI Technologies: Challenges for Deep-Submicron Structures

Published online by Cambridge University Press:  21 February 2011

Catherine Y. Wong and
Tak H. Ning
Catherine Y. Wong
Affiliation:
IBM Research, Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598
Tak H. Ning
Affiliation:
IBM Research, Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598
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Abstract

Polysilicon is a key material widely used in MOSFET, bipolar, and BICMOS devices. As these technologies evolve into the deep submicron regime, several issues emerge in the applications of polysilicon that must be addressed. In sub-0.5µm MOSFET, fabrication and reliability of n + poly for NMOS and p + poly for PMOS should be studied. In bipolar technology, scaling limits of polysilicon emitter must be investigated. Understanding polysilicon, both in terms of its basic material and process characteristics and its characteristics in specific integrated process and/or integrated device structures, is definitely required in order to realize the full potential of ULSI technologies.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990, 259
Copyright
Copyright © Materials Research Society 1990

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