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Polymerization of C-Si Films on Metal Substrates: Potential Adhesion/Diffusion Barriers for Microelectronics

Published online by Cambridge University Press:  10 February 2011

Li Chen and
J. A. Kelber
Li Chen
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
J. A. Kelber
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 76203
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Abstract

Carbon-Silicon polymeric films have been formed by electron beam bombardment (500eV) of molecularly adsorbed vinyl silane precursors under ultra-high vacuum (UHV) conditions. Temperature programmed desorption (TPD) studies show that polymerization is occurring via the vinyl groups, while Auger spectra show that the polymerized films have compositions very similar to the starting precursors; vinyltrichlorosilane (VTCS) or vinyltrimethylsilane(VTMS). VTCSderived films ˜ 100 Å thick show no reaction with Cu substrates and no diffusion of Cu until temperatures greater than 700 K, while Cu deposited on VTMS films on Al substrates show no diffusion prior to Al reaction/decomposition at 600 K. Auger and TPD studies also show that fluorocarbon precursors, such as perfluorobenzene can be incorporated into the films by e-beaminduced reactions, a first step in the controlled growth of adherent polymer films on unreactive substrates such as Cu.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998, 297
Copyright
Copyright © Materials Research Society 1998

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References

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