The many advantages of polycrystalline Si (poly-Si) to semiconductor device manufacturing are reviewed, together with methods of deposition and new uses.
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2.Faggin, F. and Klein, T., Solid State Electronics131125 (1970).Google Scholar
3
3.Chruma, J.L. and Hilton, P.G., U.S. Patent No. 3 900 597 (19 August 1975).Google Scholar
4
4.Hammond, M.L. and Gieske, R.J., Tech. Proc. SEMICON West, (Semiconductor Equipment and Materials Institute, May 1976), also published as Tech. Note 501, Low Pressure Chemical Vapor Deposition. Impact on the Industry, (Tempress Microelectronics, June 1976).Google Scholar
5
5.Hammond, M.L. in Proc. 6th Int'l. Conf. on Chemical Vapor Deposition, edited by Donaghey, L.F., (The Electrochem. Soc. 77–5Pennington, NJ1977) pp144–50.Google Scholar
6
6.Hammond, M. L., Polycrvstalline Silicon and Refractory Silicide Films for Integrated Circuits, (University Extension and College of Engieering, University of California, Berkeley, CA1980).Google Scholar
7
7.Hammond, M. L. in Silicon Processing, edited by Gupta, D.C. (Amer. Soc. Testing Materials, 1983) p206–17.10.1520/STP36168SGoogle Scholar
8
8.See mutiple papers in Ragid Thermal Annealing/Chemical Vapor Deposition. and Integrated Processing, edited by Hodul, D., Gelpey, J. C., Green, M. L., Seidel, T. E. (Mater. Res. Soc. 146Pittsburgh, PA1989).Google Scholar
9
9.Gemini Products, Lam Research Corp., 49026 Milmont Dr, Fremont, CA 94538.Google Scholar
11.Galewski, C. and Oldman, W. G. in Tech. Digest 1988 IEEE Svmp.on VLSI Technology (IEEE1988) 79.Google Scholar
12
12.Gibbons, J. F., Gronet, C. M., and Williams, K. E., Appl. Phys. Lett.41, p721, 1985, and J. F. Gibbons, U.S. Patent No. 4544 418 (1 October 1985).10.1063/1.96015Google Scholar
13
13.Raicu, B.
et al. in Polysilicon Films and Interfaces edited by Wong, C.Y. (Mat. Res. Soc. Proc. 106, Pitsburgh, PA1986) pp267–272, and R. Raicu, U.S. Patent No. 4 561 907 (31 December 1985).Google Scholar
14
14.Drowley, C. I. and Hammond, M., to be published in Solid State Technology, May 1990Google Scholar
15
15.Mieno, F.
et al. , J. Electrochem. Soc.1342863 (1987)Google Scholar
16
16.Fisher, S. M., Hammond, M. L., and Sandler, N. P., Solid State Technology, 29107 (1986).Google Scholar
17
17.Inokawa, H., Kobayashi, T., Kiuchi, K in Extended Abs., 18th Int'l. Conf. Solid State Devices and Materials, (Tokyo, Japan1986) p73, also see p229 of ref. 1.Google Scholar
18
18.Jastrzebski, L., Corboy, J. F., and Soydan, R., J Electrochem. Soc1363506 (1989).10.1149/1.2096495Google Scholar
19
19.Drowley, C. I. and Turner, J. E. in Proc. CVD-X. 10th Int'l. Conf. On Chem, Vapor Dep. edited by Cullen, G.W. (The Electrochem. Soc. 87–81987) p243.Google Scholar
20
20.Lu, N. C. C., IEEE Circuits and Devices Magazine, January 198927.10.1109/101.17236Google Scholar