Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-14T08:07:58.608Z Has data issue: false hasContentIssue false
  • English
  • Français

Practical Nanoscale Silicon Light Emitters

Published online by Cambridge University Press:  10 February 2011

Philippe M. Fauchet
Philippe M. Fauchet*
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627, USA
Get access

Abstract

Impressive advances have been made over the last few years in teaching silicon how to emit light. Recently, light-emitting devices made of porous silicon and other forms of nanoscale silicon have been demonstrated with specifications that start to make them attractive for commercial applications. This paper reviews the state-of-the-art in the materials science and device properties of nanoscale silicon-based LEDs, including their integration with microelectronic circuits.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fauchet, P.M., J. Luminesc. 70, 294 (1996)Google Scholar
2. Collins, R.T., Fauchet, P.M., and Tischler, M.A., Physics Today 50, 24 (January 1997)Google Scholar
3. Fauchet, P. M., in Light Emission in Silicon: From Physics to Devices, Lockwood, D.J. editor, Semiconductors and Semimetals, Vol.49 (Academic Press, San Diego, 1998), pp 206–252 Google Scholar
4. Uhlir, A., Jr., Bell Syst. Tech. J. 35, 333 (1956)Google Scholar
5. Smith, R.L. and Collins, S.D., J. Appl. Phys. 71, R1 (1992)Google Scholar
6. Fauchet, P. M., in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, edited by Schmuki, P., Lockwood, D. J., Isaacs, H., and Bsiesy, A. (The Electrochemical Society, Pennington, NJ, 1997), pp 27–60 Google Scholar
7. Fauchet, P.M. and von Behren, J., Phys. Stat. Sol. (b) 204, R7 (1997)Google Scholar
8. Cullis, A.G., Canham, L.T., and Calcott, P.D.J., J. Appl. Phys. 82, 909 (1997)Google Scholar
9. Canham, L.T., Cullis, A.G., Pickering, C., Dosser, O.D., Cox, T.I., and Lynch, T.P., Nature 368, 133 (1994)Google Scholar
10. von Behren, J., Chimowitz, E.H., and Fauchet, P.M., Adv. Mater. 9, 921 (1997)Google Scholar
11. Fauchet, P.M., Tsybeskov, L., Duttagupta, S.P., and Hirschman, K.D., Thin Solid Films 297, 254 (1997)Google Scholar
12. Canham, L., MRS Bulletin 18, 22 (July 1993)Google Scholar
13. Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D., and Fauchet, P.M., in Advanced Luminescent Materials, Lockwood, D.J., Fauchet, P.M., Koshida, N., and Brueck, S.R.J., editors (The Electrochemical Society, Pennington, NJ, 1996), pp 34–47 Google Scholar
14. Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D. and Fauchet, P.M., Appl. Phys. Lett. 68, 2058 (1996)Google Scholar
15. Hummel, R.E., Morrone, A., Ludwig, M., and Chang, S.S., AppI. Phys. Lett. 63, 271 (1993)Google Scholar
16. Nassiopoulos, A.G., Grigoropoulos, S., Papadimitriou, D., and Gogolides, E., Phys. Stat. Sol. (b) 190, 91 (1995)Google Scholar
17. Zaidi, S.H., Chu, A.-S., and Brueck, S.R.J., Mat. Res. Soc. Symp. Proc. 358, 957 (1995)Google Scholar
18. Tamura, H., Ruckschloss, M., Wirschem, T., and Veprek, S., Appl. Phys. Lett. 65, 1537 (1994)Google Scholar
19. Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Fauchet, P.M., Zacharias, M., Kohlert, P., McCaffrey, J.P., and Lockwood, D.J., in Quantum Confinement: Nanoscale Materials, Devices, and Systems, edited by Cahay, M., Leburton, J.P., Lockwood, D.J., and Bandyopadhyay, S. (The Electrochemical Society, Pennington, NJ, 1997), pp 134–145 Google Scholar
20. Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Zacharias, M., Fauchet, P.M., McCaffrey, J., and Lockwood, D. J., Appl. Phys. Lett. 72, 43 (1998)Google Scholar
21. Petrova-Koch, V., Fischer, T., Sheglov, K., and Koch, F., in Advanced Luminescent Materials, Lockwood, D.J., Fauchet, P.M., Koshida, N., and Brueck, S.R.J., editors (The Electrochemical Society, Pennington, NJ, 1996), pp 382–392 Google Scholar
22. Littau, K.A., Szajowski, P.J., Miller, A.J., Kortan, A.R., and Brus, L.E., J. Phys. Chem. 97, 1224 (1993)Google Scholar
23. Duttagupta, S.P., Chen, X.L., Jenekhe, S.A., and Fauchet, P.M., Solid State Commun. 101, 33 (1997)Google Scholar
24. Duttagupta, S.P., Fauchet, P.M., Chen, X.L., and Jenekhe, S.A., Mat. Res. Soc. Symp. Proc. 452, 473 (1997); W. Lang, A. Drost, P. Steiner, and H. Sandmeier, Mat. Res. Soc. Symp. Proc. 358, 561 (1995)Google Scholar
25. Peng, C., Hirschman, K.D., and Fauchet, P.M., J. Appl. Phys. 80, 295 (1996)Google Scholar
26. Burr, T.A., Seraphin, A.A., Werwa, E., and Kolenbrander, K.D., Phys. Rev B 56, 4818 (1997)Google Scholar
27. Peng, C. and Fauchet, P.M., Appl. Phys. Lett. 67, 2515 (1995)Google Scholar
28. Rao, P., Schiff, E.A., Tsybeskov, L., and Fauchet, P.M., Mat. Res. Soc. Symp. Proc. 452, 613 (1997); L. Tsybeskov, C. Peng, P.M. Fauchet, Q. Gu, and E.A. Schiff, Mat. Res. Soc. Symp. Proc. 420, 825 (1996)Google Scholar
29. Tsybeskov, L., Moore, K.L., Hall, D.G., and Fauchet, P.M., Phys. Rev. B 54, R8361 (1996)Google Scholar
30. Delerue, C., Allan, G., and Lannoo, M., Phys. Rev. B 48, 11024 (1993)Google Scholar
31. Koch, F., Petrova-Koch, V., and Muschik, T., J. Luminesc. 57, 271 (1993)Google Scholar
32. Allan, G., Delerue, C., and Lannoo, M., Phys. Rev. Lett. 76, 2961 (1996)Google Scholar
33. von Behren, J., van Buuren, T., Zacharias, M., Chimowitz, E.H. and Fauchet, P.M., Solid State Commun., in iiressGoogle Scholar
34. Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D., Fauchet, P.M., Moore, K.L., and Hall, D.G., AppI. Phys. Lett. 70, 1790 (1997)Google Scholar
35. Tsybeskov, L., Vandyshev, Ju. V., and Fauchet, P.M., Phys. Rev. B 49, 7821 (1994)Google Scholar
36. Loni, A., Simons, A.J., Cox, T.I., Calcott, P.D.J., and Canham, L.T., Electronics Lett. 31, 1288 (1995)Google Scholar
37. Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., Monica, S. La, Maiello, G., and Ferrari, A., Appl. Phys. Lett. 68, 1646 (1996)Google Scholar
38. Steiner, P., Kozlowski, F., Sandmeier, H., and Lang, W., Mat. Res. Soc. Symp. Proc. 283, 343 (1993)Google Scholar
39. Tsybeskov, L., Moore, K.L., Duttagupta, S.P., Hirschman, K.D., Hall, D.G., and Fauchet, P.M., Appl. Phys. Lett. 69, 3411 (1996)Google Scholar
40. Duttagupta, S.P., Peng, C., Tsybeskov, L., and Fauchet, P.M., Mat. Res. Soc. Symp. Proc. 380, 73 (1995); S.P. Duttagupta, C. Peng, P.M. Fauchet, S.K. Kurinec, and T.N. Blanton, J. Vac. Sci. Technol. B 13, 1230 (1995)Google Scholar
41. Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P., and Fauchet, P.M., Nature 384, 338 (1996)Google Scholar
42. Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., and Fauchet, P.M., Mat. Res. Soc. Symp. Proc. 452, 681 (1997)Google Scholar