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Pre-oxidation Silicon Cleaning and its Relation to MOS Reliability and Process-Induced Damage

Published online by Cambridge University Press:  25 February 2011

S. R. Kasi,
G. W. Rubloff,
S. A. Cohen and
L. C. Hsia
S. R. Kasi
Affiliation:
IBM Corporation, 1000 River Road, Essex Junction, Vermont 05452
G. W. Rubloff
Affiliation:
IBM Corporation, P. O. Box 218, Yorktown Heights, NY 10598
S. A. Cohen
Affiliation:
IBM Corporation, P. O. Box 218, Yorktown Heights, NY 10598
L. C. Hsia
Affiliation:
IBM Corporation, East Fishkill M/S 399, Hopewell Junction, NY 12533
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Abstract

Material and device reliability issues play a critical role in the choice of materials and processing options for ULSI technology and manufacturing. Recently, chemical surface treatments (e.g., fluorine incorporation, nitridation) have been shown to benefit MOSFET gate dielectric reliability. This paper describes the impact of different pre-oxidation chemical surface treatments on the reliability characteristics of MOS structures by using a combination of x-ray irradiation and electrical stress-induced charge injection techniques. X-ray irradiation at 1-2 keV increases oxide-trapped charge and the density of interface states substantially (80-800X), but these changes depend significantly on the chemistry of pre-oxidation cleaning. Furthermore, the specific surface treatment strongly affects subsequent device reliability; MOS degradation is up to 5X lower when fluorine-based surface pre-cleaning is used.

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References

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