Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-12T21:04:16.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Problems in Large Size Amorphous Silicon Plate Manufacturing

Published online by Cambridge University Press:  21 February 2011

J. P. M. Schmttt
J. P. M. Schmttt*
Affiliation:
SOLEMS S.A. 3, rue Leon Blum, 91120 Palaiseau, France.
Get access

Abstract

The growing aSi:H based component industry needs large PECVD machines for high throughput coating of flat substrates up to 1 meter in size. Deposition uniformity can be affected by gas depletion in diffusion and laminar gas flow geometries. Deposition rate is shown to be in conflict with large size uniformity. Main uniformity problems are found to originate from uneven RF voltage distribution, the effect is shown to be amplified near plasma equilibrium transitions. Contamination, a key factor for production quality, is controlled by the hot pressurized plasma box by both reducing unwanted background gas near UHV level and by allowing systematic fast plasma cleaning without machine corrosion or post contamination. Powder formation and dynamic is discussed based on several novel experiments and powder formation threshold is shown to be pushed away if the plasma is made intermittent.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991, 631
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Carlon, D.E. and Wronski, C.R., Appl. Phys. Lett. 31, 450 (1977).Google Scholar
2. Lecomber, P.G., Spear, W.E. and Ghaith, A., Electronics Letters 15, 179 (1979).CrossRefGoogle Scholar
3. Catalano, A. and Wood, G., MRS Symp. Proc. 118, 581 (1988)CrossRefGoogle Scholar
4. Roca i Cabarrocas, P., Chevrier, J.B., Hue, J., Lloret, A., Parey, J.Y. and Schmitt, J.P.M., to be published in J. Vac Sci. Technol. (1991).Google Scholar
5. Schmitt, J.P.M., to be published in Le Vide, Les couches minces (1991).Google Scholar
6. See for example Perrin, J., Pure & Applied Chem. 62, 1681 (1990).CrossRefGoogle Scholar
7. Perrin, J., Roca i Cabarrocas, P., Alain, B. and Friedt, J.M., Jpn. J. Appl. Phys. 27, 2041 (1988).CrossRefGoogle Scholar
8. Böhm, Ch. and Perrin, J., to be published in J. Phys. D, (1991).Google Scholar
9. Boeuf, J.P., Phys. Rev. A 36, 2789, (1987).CrossRefGoogle Scholar
10. See papers by Belenger, Ph. and Boeuf, J.P. and by Böhm, Ch and Perrin, J. in Proceed. XXth ICPIG, Pisa, July 1991.Google Scholar
11. Schmitt, J.P.M., Meot, J., Roubeau, P. and Parrens, P., 8th EC PV Solar Energy Conf., Florence 1988, Solomon, I. ed., Kluwer Acad., Dordrecht (1988) 964.Google Scholar
12. Schmitt, J.P.M., US patent 4 798 739 (17.01.89).Google Scholar
13. Tsuda, S. et al., Jpn. J. Appl. Phys. 26, 33 (1987).CrossRefGoogle Scholar
14. Perrin, J., Meot, J., Siefert, J.M. and Schmitt, J.P.M., Plasma Chemistry and Plasma Processing 10, 571, (1990).CrossRefGoogle Scholar
15. Ogier, J., Bl. Soc. Chim. 8, 116 (1879).Google Scholar
16. Spears, K.G., Kampf, R.P., Robinson, T.J., J. Chem. Phys. 92, 5297, 1988.CrossRefGoogle Scholar
17. Selwyn, G.S., Heidenreich, J.E., Haller, K.L., Appl. Phys. Lett. 57, 1876 (1990).CrossRefGoogle Scholar
18. Jellum, G.M., Graves, D.B., J. Appl. Phys. 67, 6490 (1990).CrossRefGoogle Scholar
19. Howling, A.A., Hollenstein, Ch., Paris, P.J., to appear in Appl. Phys. Lett. (1991).Google Scholar
20. Watanbe, Y., Shiratani, M., Kubo, Y., Ogawa, I., Ogi, S., Appl. Phys. Lett. 53, 1263 (1988).CrossRefGoogle Scholar
21. Bouchoule, A., Plain, A., Boufendi, L., Blondeau, J. Ph., Laure, C., to appear in J. Appl. Phys. (1991).Google Scholar
22. Mc Caughey, M.J., Kushner, M.J., Appl. Phys. Lett. 55, 951 (1989).CrossRefGoogle Scholar
23. Lloret, A., Bertran, E., Andujar, J.L., Canillas, A. and Morenza, J.L., J. Appl. Phys. 69, 632 (1991).CrossRefGoogle Scholar
24. Andujar, J.L., Bertran, E., Canillas, A., Campmany, J., Serra, J., Roch, C., Lloret, A., Submitted to Appl. Phys. Lett.Google Scholar