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Process-Induced Deformations and Stacking Faults in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Robert S Okojie,
Xianrong Huang,
Michael Dudley,
Ming Zhang and
Pirouz Pirouz
Robert S Okojie
Affiliation:
Robert.S.Okojie@nasa.gov, NASA, Sensors and Electronics Branch, 21000 Brookpark Road,, Mail Stop 77-1, Cleveland, OH, 44136, United States, (216)433-6522, (216)433-8643
Xianrong Huang
Affiliation:
xiahuang@ms.cc.sunysb.edu, State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ming Zhang
Affiliation:
mxz30@pop.cwru.edu, Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
Pirouz Pirouz
Affiliation:
pxp7@cwru.edu, Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
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Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

Keywords

defectsthermal stressestransmission electron microscopy (TEM)

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References

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