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Properties of Thin Films After Focused Beam Processing

Published online by Cambridge University Press:  28 February 2011

I.H. Campbell and
P.M. Fauchet
I.H. Campbell
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544 Fran Adar, Instruments S.A., Metuchen, NJ 08840
P.M. Fauchet
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, NJ 08544 Fran Adar, Instruments S.A., Metuchen, NJ 08840
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Abstract

A Raman microprobe is used to detect the changes in crystallinity, stress and homogeneity on thin films of SOI irradiated by a single laser pulse. Maximum, isotropic, planar tensile stress increased from 5x109 dyn/cm2 to 12x109 dyn/cm2 in the processed area and stress of 8x109 dyn/cm2 was observed 20 μm beyond the damaged region. Crystallite sizes of 50 Å to greater than 300 Å were observed inside the processed area. Results obtained with different pulsed laser frequencies are compared and significant differences in the processing effects are observed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985, 311
Copyright
Copyright © Materials Research Society 1986

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References

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