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Pulsed Electron Beam Processing of Silicon

Published online by Cambridge University Press:  15 February 2011

Anton C. Greenwald,
Roger G. Little,
Mark B. Spitzer and
Robert G. Wolfson
Anton C. Greenwald
Affiliation:
Spire Corporation, Patriots Park, Bedford, Massachusetts 01730
Roger G. Little
Affiliation:
Spire Corporation, Patriots Park, Bedford, Massachusetts 01730
Mark B. Spitzer
Affiliation:
Spire Corporation, Patriots Park, Bedford, Massachusetts 01730
Robert G. Wolfson
Affiliation:
Spire Corporation, Patriots Park, Bedford, Massachusetts 01730
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Abstract

Continued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.

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References

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