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Pulsed Laser Planarization of Metals for IC Interconnect

Published online by Cambridge University Press:  25 February 2011

Robert J. Baseman,
Tung-Sheng Kuan,
M. Osama Aboelfotoh,
Joseph C. Andreshak,
Frank E. Turene,
Rosemary A. Previti-Kelly and
James G. Ryan
Robert J. Baseman
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Tung-Sheng Kuan
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
M. Osama Aboelfotoh
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Joseph C. Andreshak
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Frank E. Turene
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
Rosemary A. Previti-Kelly
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452
James G. Ryan
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

We consider the feasibility of using an excimer laser to planarize copper deposited over polyimide. Even though the polyimide is thermally sensitive, a 2.8 µn thick copper film, deposited over polyimide, was planarized with 248 nm, 25 ns, laser fluences from 1.7 to 2.6 J/cm2. Although planar surfaces were readily produced, a variety of defects were observed in the underlying structures. The defects observed include stress induced fractures of the interconnect structure, polyimide surface roughening, and changes in the electrical characteristics of the polyimide. We also describe cross sectional TEM images of cavities formed in interlayer contacts during laser planarization that support recent descriptions of the surface tension driven flow.

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References

1) Tuckerman, D. and Schmitt, R.L., in Proceedings of the 1985 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1985), pp. 24–31.Google Scholar
2) Tuckerman, D.B. and Weisberg, A.H., IEEE Electron Device Letters, EDL–7, 1 (1986); D.B. Tuckerman and A.H. Weisberg, Solid State Technology, 29,129 (1986).CrossRefGoogle Scholar
3) Mukai, R., Sasaki, N., and Nakano, M., IEEE Electron Device Letters, EDL–8, 76 (1987); R. Mukai, N. Sasaki, and M. Nakano, in Beam-Solid Interactions and Transient Processes, edited by S.T. Picraux, M.O. Thompson, and J.S. Williams, Mater. Res. Soc. Proc. No. 74 (Materials Research Society, Pittsburgh, PA, 1987) pp. 229-234; R. Mukai, K. Kobayashi, and M. Nakano, Proceedings of the 1988 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1988), pp. 101-107.Google Scholar
4) Baseman, R.J., Andreshak, J.C., Gupta, A., Ting, C-Y., Schnitzel, R.H., and Havas, J., in Selected Topics in Electronic Materials, edited by Appleton, B.R., Biegelsen, D.K., Brown, W.L., and Knapp, J.A., MRS Extended Abstracts, Vol. EA–18 (Materials Research Society, Pittsburgh, PA, 1988) pp. 259–262.Google Scholar
5) Spiess, W., Strack, H., J. Vac. Sci. Technol., B7, 127 (1989).Google Scholar
6) Broadbent, E.K., Ritz, K.N., Maillot, P., Ong, E., in Proceedings of the 1989 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1989), pp. 336–345.Google Scholar
7) Woratschek, B., Carey, P., Stolz, M., Bachmann, F. in Proceedings of the 1989 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1989), pp. 309–314.Google Scholar
8) Marella, P.F., Tuckerman, D.B., and Pease, R.F., Appl. Phys. Lett., 54, 1109 (1989); P.F. Marelia, D.B. Tuckerman, and R.F. Pease, in Laser and Particle-Beam Modification of Chemical Processes on Surfaces, edited by A.W. Johnson, G.L. Loper, and T.W. Sigmon, Mater. Res. Soc. Proc. No. 129 (Materials Research Society, Pittsburgh, PA, 1989) pp. 569-577.Google Scholar
9) Bernhardt, A.F. and Contolini, R.J., Tuckerman, D.B., and Weisberg, A.H., in Laser and Particle-Beam Modification of Chemical Processes on Surfaces, edited by Johnson, A.W., Loper, G.L., and Sigmon, T.W., Mater. Res. Soc. Proc. No. 129 (Materials Research Society, Pittsburgh, PA, 1989) 559–567.Google Scholar
10) Liu, R., Cheung, K.P., Lai, W.Y.-C., Heim, R., in Proceedings of the 1989 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1989), pp. 329–335.Google Scholar
11) Baseman, R.J., Turene, F.E., J. Vac. Sci. Technol. B8, 1097 (1990).Google Scholar
12) Sachdev, H., unpublished results.Google Scholar
13) Weast, R.C., editor, Handbook of Chemistry and Physics, 56th edition ( CRC Press, Cleveland, Ohio, 1975 ), p. D173.Google Scholar
14) Grove, A.S., Physics and Technology of Semiconductor Devices, ( John Wiley and Sons, Inc., New York, New York, 1967 ), p.103.Google Scholar
15) Wilson, A.M., in Polyimides Volume 2, edited by Mittal, K.L., ( Plenum Press, New York, New York, 1984 ), pp 715–733.Google Scholar
16) Bessonov, M.I., Koton, M.M., Kudryavtsev, V.V., Laius, L.A., Polyimides, ( Consultants Bureau, New York, New York, 1987 ), p. 125–137.Google Scholar
17) Palik, E.D., editor, Handbook of Optical Constants of Solids (Academic Press, New York, 1985), pp. 284, 397.Google Scholar
18) Sheng, T-T., Chang, C.C., IEEE Trans. Elec. Dev., ED–23, 531 (1976)Google Scholar
19) Marella, P.F., Tuckerman, D.B., Pease, R.F., Appl. Phys. Lett., 56, 2625 (1990).Google Scholar