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Pulsed-Light-Induced Metastable Defect Creation in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Jong-Hwan Yoon and
H. L. Kim
Jong-Hwan Yoon
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200–701, Republic of, Korea
H. L. Kim
Affiliation:
Department of Chemistry, College of Natural Science, Kangwon National University
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Abstract

We report the results of a study of metastable defect creation by pulsed light soaking in undoped hydrogenated amorphous silicon (a-Si:H). An illumination time dependence of the defect density, a saturated defect density, and light-induced annealing under pulsed laser light have been studied. Measurements show approximately a t1/2 time-dependence of the defect creation, which is independent of light intensity. It is observed that the saturation value of the defect density is about one order of magnitude higher than by cw illumination in device quality films. It has been suggested that these results would be due to the difference in the light-induced defect annealing rate between cw and pulsed lights, in which it is found that the light-induced annealing rate by pulsed light is lower than by cw light.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995, 373
Copyright
Copyright © Materials Research Society 1995

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References

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