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Quantum Dot Long-Wavelength Detectors

Published online by Cambridge University Press:  21 March 2011

Pallab Bhattacharya,
Adrienne D. Stiff-Roberts,
Sanjay Krishna and
Steve Kennerly
Pallab Bhattacharya
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109-2122, U.S.A.
Adrienne D. Stiff-Roberts
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109-2122, U.S.A.
Sanjay Krishna
Affiliation:
Center for High Technology Materials, Department of Electrical Engineering and Computer Engineering, University of New Mexico Albuquerque, NM 87106, U.S.A.
Steve Kennerly
Affiliation:
Sensors and Electron Devices Directorate, U. S. Army Research Laboratory Adelphi, MD 20783, U.S.A.
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Abstract

Long-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

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