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Quantum Well Intermixing for Optoelectronic Applications

Published online by Cambridge University Press:  10 February 2011

C. Jagadish,
H. H. Tan,
S. Yuan and
M. Gal
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia (cxj 109@rsphysse.anu.edu.au)
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia (cxj 109@rsphysse.anu.edu.au)
S. Yuan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia (cxj 109@rsphysse.anu.edu.au)
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
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Abstract

Ion implantation induced intermixing of GaAs-AlGaAs quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Large energy shifts are observed in all the cases, though recovery of photoluminescence intensities in proton case is more significant than others. Energy shifts are linear with proton dose and no saturation was observed even up to a dose of ∼ 5 × 1016 cm−2. Saturation in energy shifts are seen for both As and 0 ions at high doses. Energy shifts are also found to be dependent on Al composition of the barriers. Wavelength shifted quantum well lasers are fabricated with energy shifts of about 5 nm with no changes in threshold current using proton implantation. Anodic oxide induced intermixing of GaAs-AlGaAs quantum wells is demonstrated.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997, 397
Copyright
Copyright © Materials Research Society 1998

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