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Quick Tests for Electromigration: Useful but Not Without Danger

Published online by Cambridge University Press:  15 February 2011

J. R. Lloyd
J. R. Lloyd*
Affiliation:
Digital Equipment Corporation, 77 Reed Road, Hudson MA 01749-2895 USA Max Planck Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraße 71, D-7000, Stuttgart 1, Germany
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Abstract

Traditional electromigration life testing is a time-consuming and often painful process, consuming many expensive samples and weeks of valuable time to collect enough data for a statistically significant conclusion. Annoying, to say the least, this often causes real problems in process development when cycle times of new products can often be measured in months. Therefore, there has been a strong incentive to search for alternatives.

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References

REFERENCES

1) Pasco, R. and Schwarz, J.A., Proc. 21st Ann. Reliab. Phys. Symp., IEEE, 10 (1983)Google Scholar
2) Chen, T.M., Djeu, T.P. and Moore, R.D., Proc. 23rd Ann. Reliab. Phys. Symp., IEEE, 87 (1985)Google Scholar
3) Root, B.J. and Turner, T., Proc. 23rd Ann. Reliab. Phys. Symp., IEEE, 100 (1985)Google Scholar
4) Hong, C.C. and Crook, D.L., Proc. 23rd Ann. Reliab. Phys. Symp., IEEE, 108 (1985)Google Scholar
5) JR. Lloyd and Koch, R.H., Proc. 25th Ann. Reliab. Phys. Symp., IEEE, 161 (1987)Google Scholar
6) Towner, J.M., Dirks, A.G. and Tien, T., Proc. 24th Ann. Reliab. Phys. Symp. 7 (1986)Google Scholar
7) Massalksi, T.B. (Editor) Binary Alloy Phase Diagrams, American Society for Metals (1986)Google Scholar
8) Frear, D.R., Michael, J.R., Kim, C., Romig, A.D. Jr., and Morris, J.W. Jr., SPIE Vol.1596 Metallization: Performance and Reliability Issues, 72 (1991)Google Scholar
9) Rose, J.H., Lloyd, J.R., Shepela, A. and Riel, N., Proc. Annual Meeting of Electron Microscopy Society of America (EMSA) (1991)Google Scholar
10) d'Heurle, F.M. and Ho, P.S., in TYhin Films, Interdiffusion and Reactions, Poate, J.M., Tu, K.N. and Mayer, J.W. (editors), Electrochemical Society (1975) and refrences therein.Google Scholar
11) Lloyd, J.R. SPIE Vol.1596 Metallization: Performance and Reliability Issues, 106 (1991) and references therein.Google Scholar
12) Shatzkes, M. and Lloyd, J.R., J. Appl. Phys., 59, 3890 (1986)CrossRefGoogle Scholar
13) Clement, J.J. and Lloyd, J.R., J. Appl. Phys., 71, 1729 (1992)CrossRefGoogle Scholar
14) Madison AvenueGoogle Scholar
15) Bui, N.G., Pham, V.H., Chen, S. and Yue, J.T., 1990 Wafer Level Reliability Workshop Re port, p 133 (Unpublished)Google Scholar
16) Crowell, C.R., Shih, C.C. and Tyree, V., Proc. 28th Ann. Reliab. Phys. Symp. IEEE, 37 (1990)Google Scholar
17) In preparing this review, it was discovered that although there has been considerable discussion of the SWEAT and BEM tests at many workshops and conferences, and even a JEDEC committee has been investigating the techniques, precious little has appeared in the technical journals. Perhaps this is due to the problems outlined in the text.Google Scholar
18) Bacci, L., Caprile, C. and DeSanti, G., Proc. V-MIC Conf., 463 (1987)Google Scholar
19) Ditali, A. and Cross, R., Solid State Technology, March 1991, p 41Google Scholar
20) Elliott, L., White, S. and Teasdale, N.. Digital Equipment Corp. (unpublished) (1991)Google Scholar
21) Pasco, R.W., Felton, L.E. and Schwarz, J.A., MRS Proc. Vol.25, 581 (1984)CrossRefGoogle Scholar
22) Schwarz, J.A. and Felton, L.E., Solid State Electronics, 28, 669 (1985)CrossRefGoogle Scholar
23) Felton, L.E., Schwarz, J.A. and Lloyd, J.R., Thin Solid Films, 155, 209 (1987)CrossRefGoogle Scholar
24) Patrinos, A.J. and Schwarz, J.A., Thin Solid Films, 196, 47 (1991)CrossRefGoogle Scholar
25) Simmons, R.O. and Baluffi, R.W., Phys. Rev., 129, 1553 (1963)CrossRefGoogle Scholar
26) Lloyd, J.R. and Smith, P.M., J. Vac. Sci. Technol. Al, 455 (1983)Google Scholar
27) Lloyd, J.R. and Koch, R.H., Appl. Phys. Lett., 52, 914 (1988)CrossRefGoogle Scholar
28) Maiz, J.A. and Segura, I., Proc. 26th Ann. Int'l. Reliab. Phys. Symp., 209 (1988)Google Scholar
29) Dutta, P. and Horn, P.M., Rev. Mod. Phys. 53, 497 (1981)CrossRefGoogle Scholar
30) Koch, R.H., Lloyd, J.R. and Cronin, J., Phys. Rev. Lett., 55, 2487 (1985)CrossRefGoogle Scholar
31) Rodbell, K.P., Ficalora, P.J. and Koch, R.H., Appl. Phys. Lett., 50, 1415 (1987) 36)CrossRefGoogle Scholar
32) Cottle, J.G. and Chen, T.M., Proc. V-MIC Conf., CH-2488–5/87, 449 (1987)Google Scholar
33) Yang, W. and Celik-Butler, Z., Solid-State Electronics, 34, 911 (1991)CrossRefGoogle Scholar
34) Liou, D.M., Gong, J. and Chen, C.C., Jap. J. Appl. Phys., 29, 1283 (1990)CrossRefGoogle Scholar