Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T19:51:29.966Z Has data issue: false hasContentIssue false
  • English
  • Français

Radiation Enhanced Diffusion in Mgo

Published online by Cambridge University Press:  16 February 2011

Andrew I. Van Sambeek,
R.S. Averback,
C.P. Flynn and
M.H. Yang
Andrew I. Van Sambeek
Affiliation:
University of Illinois at Urbana-Champaign, Department of Materials Science and Engineering, Urbana, IL 61801.
R.S. Averback
Affiliation:
University of Illinois at Urbana-Champaign, Department of Materials Science and Engineering, Urbana, IL 61801.
C.P. Flynn
Affiliation:
University of Illinois at Urbana-Champaign, Department of Physics, Urbana, IL 61801.
M.H. Yang
Affiliation:
University of Illinois at Urbana-Champaign, Department of Physics, Urbana, IL 61801.
Get access

Abstract

Measurements of marker spreading following 2.0 MeV Kr+ irradiation at 25 to 1300°C have been performed on MgO samples containing O18, Ca and Zn buried tracer atoms. Ion beam mixing at room temperature on both sublattices was approximately 2.0 to 3.0 A5/eV. From 600 to 1000°C, the apparent activation enthalpy for diffusion on the anion sublattice (O18) was 0.35 eV and the diffusion coefficient was linear in the irradiation flux. From 1150 to 1300°C the measured activation enthalpy was 4.1 eV and the diffusion coefficient was proportional to the square root of flux. The measured activation enthalpy on the cation sublattice was roughly 0.30 eV up to 700°C for both Ca or Zn doped samples. Measurable extrinsic thermal diffusion from vacancies present for trivalent impurity charge compensation occurred above this temperature, complicating the analysis at higher temperatures. The observed kinetics in the lower temperature range are most likely controlled by interstitial loop formation. In the higher temperature range, vacancy traps with a binding energy of approximately 2 eV could account for the high activation enthalpy.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994, 293
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1) Lam, N.Q., Sizmann, RI and Bisswanger, H., Rad. Eft., 20, 223, (1973).Google Scholar
2) Naundor, V., Int. J. Mod. Phys. B, 6, 2925, (1992).Google Scholar
3) Bruce, A.J. and Nicolet, M.A., Appl. Phys. A, 33, 167, (1984).Google Scholar
4) Bruce, A.J., Paine, B.M. and Nicolet, M.A., Appl. Phys. Lett., 44, 45, (1984).Google Scholar
5) Kinoshita, C., Hayashi, K. and Mitchell, T.E., in Structure and Properties of MgO and A12 Q3Ceramics, edited by Kingery, W.D., (The American Ceramic Society, Ohio, 1984), p. 49a.Google Scholar
6) Bowens, D.H., Wills, R.S. and Clarke, F.J.P., J. Nucl. Mat., 6, 148, (1962).Google Scholar
7) Groves, G.W. and Kelly, A., Phil. Mag., 8, 1463, (1963).Google Scholar
8) Cooper, E.A., Nastasi, M. and Sickafus, K.E., Mat. Res. Soc. Symp. Proc., 279, 457, (1993).Google Scholar
9) Lomer, W.M., U.K.A.E.A. Report AERE-T/R1540, (1954).Google Scholar
10) Dienes, G.J. and , Damask, J. Appl. Phys., 29, 1713, (1958).Google Scholar
11) Sizmann, P., J. Nucl. Mat., 69/70, 386, (1968).Google Scholar
12) Yadavalli, S., Yang, M.H. and Flynn, C.P., Phys. Rev. B, 41, 7961, (1990).Google Scholar
13) Yang, M.H. and Flynn, C.P., Mat. Res. Soc. Symp. Proc., 279, 837, (1993).Google Scholar
14) Ziegler, J.F., Biersack, J.P. and Littmark, V., The Stopping and Range of Ions in Solid, vol. 1, (Pergamon Press, New York, 1985).Google Scholar
15) Yang, M.H. and Flynn, C.P., Phys. Rev. Lett., 73, 1809, (1994).Google Scholar
16) Gras-Marti, A. and Sigmund, P., Nucl. Instr. and Meth., 180, 211, (1981).Google Scholar
17) Sigmund, P. and Gras-Marti, A., Nucl. Instr. and Meth., 182/183, 25, (1981).Google Scholar
18) Chen, Y., Williams, R.T. and Sibley, W.A., Phys. Rev., 182, 960, (1969).Google Scholar
19) Scholz, C. and Ehrhart, P., in Defects In Insulating Materials, vol 2, edited by Konert, O. and Spaeth, J.-M., (World Scientific, New Jersey, 1993), p. 673.Google Scholar
20) Sangster, M.J.L. and Rowell, D.K., Phil. Mag. A, 44, 613, (1981).Google Scholar
21) Mackrodt, W.C. and Stewart, R.F., J. Phys. C., 12, 5015, (1979).Google Scholar
22) Chen, Y., Trueblood, D.L., Schow, O.E. and Tohver, H.T., J. Phys. C., 3, 2501, (1970).Google Scholar
23) Sharp, J.V. and Rumsby, D., Rad. Effects, 17, 65, (1973).Google Scholar