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Radiation Enhanced Dislocation Glide and Rapid Degradation

Published online by Cambridge University Press:  16 February 2011

K. Maeda,
Y. Yamashita,
N Maeda and
S. Takeuchi
K. Maeda
Affiliation:
Department of Applied Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan
Y. Yamashita
Affiliation:
Department of Applied Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan
N Maeda
Affiliation:
The Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, Japan
S. Takeuchi
Affiliation:
The Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, Japan
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Abstract

Conspicuous enhancement of dislocation glides under minority carrier injection is reviewed. Systematic investigation of dislocation glide velocity under electron-beam irradiation in various semiconducting crystals showed that the radiation enhanced dislocation glide (REDG) effect exhibits features expected from the recombination enhanced defect motion (REDM) mechanism. Theoretical analysis, based on the kink diffusion model for the elementary process of dislocation motion, shows that the REDG effect requires enhancement of double-kink formation. An experimental attempt provided an evidence for the smallest double kink formation is the only process that is enhanced by carrier injection. In light of the knowledge available at present, a guide line in device design to minimize degradation in the dislocation glide mode is suggested.

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References

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