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Raman Spectra of Ion Implanted Graphite

Published online by Cambridge University Press:  15 February 2011

B.S. Elman,
H. Mazurek,
M.S. Dresselhaus and
G. Dresselhaus
B.S. Elman
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
H. Mazurek
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
M.S. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Abstract

Raman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981, 425
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

Department of Physics.

*

Center for Materials Science and Engineering.

§

Now at ARCO Chemical Co., 3801 Westchester, Pike Newtown Sq., PA 19073

°

Department of Electrical Engineering and Computer Science

Francis Bitter National Magnet Laboratory, supported by NSF.

References

REFERENCES

1.Elman, B.S., Dresselhaus, M.S., Dresselhaus, G., Maby, E.W. and Mazurek, H., Phys. Rev. B 24, 1027 (1981).Google Scholar
2.Elman, B.S., Dresselhaus, G. and Shayegan, M., Extended Abstracts of the 15th Biennial Conference on Carbon, University of Penn., p. 24 (1981).Google Scholar
3.Elman, B.S., Shayegan, M., Dresselhaus, M.S., Mazurek, H. and Dresselhaus, G., (submitted for publication).Google Scholar
4.Nemanich, R.J. and Solin, S.A., Phys. Rev. B 20, 392 (1979).Google Scholar
5.Nemanich, R.J., Lucovsky, G. and Solin, S.A., Mater. Sci. Eng. 31, 157 (1977).Google Scholar
6.Eklund, P.C., Smith, D.S., Murthy, V.R.K. and Leung, S.Y., Synthetic Metals 2, 99 (1980).Google Scholar
7.Al-Jishi, R., Elman, B., Dresselhaus, G., Extended Abstracts of the 15th Biennial Conference on Carbon, University of Pennsylvania, 1981, p. 34.Google Scholar
8.Tuinstra, F. and Koenig, J.L., J. Chem. Phys. 53, 1126 (1970).Google Scholar
9.Marchand, A., Lespade, P. (private communication);Google Scholar
Marchand, A., Lespade, P. and Covzi, M., Extended Abstracts of the 15th Biennial Conf. on Carbon, University of Penn., p. 282 (1981).Google Scholar
10.Lindhard, J., Scharff, M. and Schiott, H.E., Kgl. Danske Videnskab Selskab, Mat.-Fys. Medd. 33, 14 (1963).Google Scholar
11.Shayegan, M., Elman, B.S., Mazurek, H., Dresselhaus, M.S. and Dresselhaus, G., (proceedings of this conference).Google Scholar
12.Mayer, J.W., Eriksson, L. and Davis, J.A., Ion Implantation in Semiconductors, Academic Press (1970).Google Scholar
13.Marchand, A. and Paucault, A., “Nouveau Traite De Chemie Minerale,” Vol. VIII, No. 1, 457 (1968).Google Scholar