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Raman Spectroscopy for Semiconductor Thin Film Analysis

Published online by Cambridge University Press:  25 February 2011

R. J. Nemanich
R. J. Nemanich*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The application of Raman spectroscopy to various semiconductor thin film, interface and surface problems will be presented. Specific focus will be on the vibrational excitations of the materials systems which are probed by the Raman measurements. Experimental configurations are described which are optimized for general thin film analysis, microprobe analysis, and in situ UHV surface/interface analysis. The vibrational properties can be used for phase and composition identification, crystal/amorphous structure, strain, impurity configurations, and superlattice properties. Specific examples will include thermal processing of CVD Si films, microprobe of laser annealed films, MOCVD AlxGa1−xAs films, silicide formation and identification, amorphous superlattices, and hydrogen impurities in crystalline Si.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986, 23
Copyright
Copyright © Materials Research Society 1986

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References

1. For a review of Raman scattering see Hayes, W. and Loudon, R., Scattering of Light by Crystals, (Wiley, New York, 1978).Google Scholar
2. Brodsky, M. H., Light Scattering in Solids I, ed. by Cardona, M. (Springer-Verlag, Berlin, 1983) p. 205.Google Scholar
3. Abstreiter, G., Cardona, M., and Pinczuk, A., Light Scattering in Solids IV, ed. by Cardona, M. and Guntherodt, G. (Springer-Verlag, Berlin, 1984) p. 5.Google Scholar
4. Abstreiter, G., Bauser, E., Fischer, S., and Ploog, K., Appl. Phys. 16, 345 (1978).Google Scholar
5. Long, D. A., Raman Spectroscolpy, (McGraw-Hill, New York, 1977) p. 41.Google Scholar
6. Smith, J. E. Jr., Brodsky, M. H., Crowder, B. L., Nathan, M. I., Pinczuk, A., Phys. Rev. Lett. 26, 642 (1971).Google Scholar
7. Shuker, R. and Gamon, R., Phys. Rev. Lett. 25, 222 (1970).CrossRefGoogle Scholar
8. Iqbal, Z., Veprek, S., Webb, A. P. and Capezzuto, P., Solid State Commun. 37, 993 (1981).Google Scholar
9. Nemanich, R. J., Solin, S. A., and Martin, R. M., Phys. Rev. B23, 6348 (1981).Google Scholar
10. Kanellis, G., Morhange, J. F. and Balkanski, M., Phys. Rev. B21, 1543 (1980).Google Scholar
11. Weinstein, B. A. and Piermarini, G. J., Phys. Rev. B12, 1172 (1975).Google Scholar
12. Anastassakis, E., Pinczuk, A. and Burstein, E., Solid State Commun. 8, 133 (1970).Google Scholar
13. Hart, T. R., Aggarwal, R. L., and Lax, B., Phys. Rev. B1, 638 (1970).CrossRefGoogle Scholar
14. Lyon, S. A., Nemanich, R. J., Johnson, N. M., and Biegelsen, D. K., Appl. Phys. Lett. 316 (1982).Google Scholar
15. Ohmura, Y., Inoue, T. and Yoshi, T., J. Appl. Phys. 54, 6779 (1983).CrossRefGoogle Scholar
16. Tsu, R., Kawamura, H., and Esaki, L., in Proceedings of the 11th Int. Conf. on the Physics of Semiconductors, Warsaw, 1972, ed. by M. Miasek (P.W.N.-Polish-Scientific,Warsaw, 1972), p. 1135.Google Scholar
17. Jusserand, B. and Sapriel, J., Phys. Rev. B24, 7194 (1981).CrossRefGoogle Scholar
18. Connell, G. A. N., Nemanich, R. J., and Tsai, C. C., Appl. Phys. Lett. 36, 31 (1980).Google Scholar
19. Nemanich, R. J., Tsai, C. C., Thompson, M. J., and Sigmon, T. W., J. Vac. Soc. Technol. 19, 685 (1981).Google Scholar
20. Nemanich, R. J., and Doland, C. M., J. Vac. Soc. Technol. B3, 1142 (1985).Google Scholar
21. Tsang, J. C., Thompson, W. A., and Oehrlein, G. S., J. Vac. Sci. Technol. B3, 1129 (1985).CrossRefGoogle Scholar
22. Tsang, J. C., in Dynamics of Surfaces, ed. by Pullman, B. et al. (D. Reidel, New York, 1984) p. 379.Google Scholar
23. Colvard, C., Merlin, R., Klein, M. V., and Gossard, A. C., Phys. Rev. Lett. 45, 298 (1980).Google Scholar
24. Sapriel, J., Michel, J. C., Toledano, J. C. Vacher, R., Kervarec, J., and Regreny, A., Phys. Rev. B28, 2007 (1983).CrossRefGoogle Scholar
25. Colvard, C., Grant, T. A., Klein, M. V., Merlin, R., Fischer, R., Morkoc, H., and Gossard, A. C., Phys. Rev. Lett. 45, 298 (1980).CrossRefGoogle Scholar
26. Santos, P., Hundausen, M., and Ley, L., Phys. Rev. B33, 1516 (1986).Google Scholar
27. Tsai, C. C., Nemanich, R. J., to be published.Google Scholar
28. Chandrasekhar, M., Chandrasekhar, H. R., Grimsditch, M., and Cardona, M., Phys. Rev. B22, 4825 (1980).Google Scholar
29. Nemanich, R. J. and Johnson, N. M., to be published.Google Scholar
30. Johnson, N. M., Herring, C., and Chadi, D. J., Phys. Rev. Lett. 56, 769 (1986).Google Scholar
31. Lucovsky, G., Nemanich, R. J., and Knights, J. C., Phys. Rev. B19, 2064 (1979).Google Scholar