Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-14T01:29:28.450Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Processing: A Bibliography

Published online by Cambridge University Press:  26 February 2011

R. A. Powell and
M. L. Manion
R. A. Powell
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
M. L. Manion
Affiliation:
Zoecon Corporation, 975 California Avenue, Palo Alto, CA 94303
Get access

Abstract

This bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985, 441
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Reviews

001 Applications of oeam-solid interactions in semiconductor material and device processing Fan, J.C.C. in MRS Symposia Proceedings 1984, vol.35, pp. 39–52.CrossRefGoogle Scholar
002Beam annealing of ion-implanted silicon Gibbons, J.F. in Ion Implantation: Equipment and Techniques, eds. Ryssel, H., Glawischnig, H. (Springer-Verlag, Heidelberg, 1983), pp. 482–497.CrossRefGoogle Scholar
003Beam processing of silicon Gibbons, J.F. in CW Beam Processing of Silicon and Other Semiconductors [Semiconductors and Semimetals, vol.17], ed. Gibbons, J.F. (Academic, Orlando, FL, 1984), pp. 2–70.Google Scholar
004 Contribution of oeam processing to present and future integrated circuit technologies Hill, C. in MRS Symposia Proceedings 1982, vol.13, pp. 381–392.CrossRefGoogle Scholar
005 Electron beam processing of semiconductors Ahmed, H., McMahon, R.A. in MRS Symposia Proceedings 1982, vol.13, pp. 653–664.CrossRefGoogle Scholar
006 Multiple-scan e-beam method applied to a range of semiconducting materials Shah, N.J., McMahon, R.A., Williams, J.G.S., Ahmed, H. in MRS Symposia Proceedings 1980, vol.4, pp. 201–208.CrossRefGoogle Scholar
007 Rapid annealing technology for future VLSI Wilson, S.R., Paulson, W.M., Gregory, R.B. Solid State Technology, 28 (6), 185–190 (June 1985).Google Scholar
008 Rapid thermal annealing of ion-implanted semiconductors Narayan, J., Holland, O. W. Journal of Applied Physics, 56(10), 2913–2921 (November 1984).CrossRefGoogle Scholar
009 A review of rapid thermal annealing (RTA) of Be, BF2 and As ions implanted into silicon Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, B7 (8), 251–260 (March 1985).CrossRefGoogle Scholar
010Short time annealing Sedgwick, T.O. Electrochemical Society Extended Abstracts [Detroit, MI, 17–21 October 1982], vol. 82–2, abstr. 155, p. 245; full paper in VLSI Science and Technology/1982 [Electrochem. Soc. Proc. vol. 82–7, 19831, eds. C.J. Dell'Oca, W.M. Bullis, pp. 130–146.Google Scholar
011 Transient heating with graphite heaters for semiconductor processing Fan, J.C.C., Tsaur, B-Y., Geis, M.W. in MRS Symposia Proceedings 1981, vol.4, pp. 751–758.CrossRefGoogle Scholar
012 Transient thermal processing of silicon Celler, G.K., Seidel, T.E. in Applied Solid State Science: Advances in Materials and Device Research, Suppl. 2, Silicon Integrated Circuits, Pt. C, ed. Kahng, D. (Academic, Orlando, FL, 1985). Pp.2–73.Google Scholar
013 1–2 keV boron implants into silicon Davies, D.E. IEEE Electron Device Letters, EDL–6 (8), 397–399 (August 1985).CrossRefGoogle Scholar
014 Activation and process characteristics of infrared rapid isothermal and furnace annealing techniques Downey, D.F., Russo, C.J., White, J.T. Solid State Technology, 25 (9), 87–93 (September 1982).Google Scholar
015 Activation of arsenic-implanted silicon using an incoherent light source Powell, R.A., Yep, T.O., Fulks, R.T. Applied Physics Letters, 39 (2), 150–152 (15 July 1981).CrossRefGoogle Scholar
016 Activation of shallow, high-dose BF2 + implants into silicon by rapid thermal processing Powell, R.A. Journal of Applied Physics, 56 (10), 2837–2843 (15 November 1984).CrossRefGoogle Scholar
017 Annealing of antimony implanted silicon with halogen lamp irradiation Borisenko, V.E., Labunov, V.A. Physica Status Solidi, A72 (2), K173–K176 (16 August 1982).CrossRefGoogle Scholar
018 Annealing of arsenic- and antimony-implanted silicon single crystals using a CW xenon arc lamp Nylandsted, L.A., Correra, L. Radiation Effects Letters, 76 (3), 67–72 (1983).Google Scholar
019 Annealing of phosphorus-ion-implanted silicon using a CO2 laser Miyeo, M., Ohyu, K., Tokuyama, T. Applied Physics Letters, 35 (3), 227–229 (1 August 1979).CrossRefGoogle Scholar
020 Applications of a continuous wave incoherent light source (CWILS) to semiconductor processing Harrison, H.B., Johnson, S.T., Cornish, B., Adams, F.M., Short, K.T., Williams, J.S. in MRS Symposia Proceeding 1982, vol.13, pp. 393–400.CrossRefGoogle Scholar
021 Arsenic-Implanted Si layers annealed using a CW Xe arc lamp Drowley, C., Hu, C. Applied Physics Letters, 38 (11), 876–878 (1 June 1981).CrossRefGoogle Scholar
022 Asymptotic estimates of diffusion times for rapid thermal annealing Fehribach, J.D., Ghez, R., Oehrlein, G.S. Applied Physics Letters, 46 (4), 433–435 (15 February 1985).CrossRefGoogle Scholar
023 Beam processing of silicon with a scanning CW Hg lamp Stultz, T., Sturm, J., Gibbons, J. in MRS Symposia Proceedings 1982, vol. 13, pp. 463–476 CrossRefGoogle Scholar
024 Behavior of antimony above solid solubility in silicon produced by implantation and rapid thermal annealing Kwor, R., Ho, C.C., Baumann, S., Gelpey, J. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985], vol.85–1, abstr. 257, p. 373.Google Scholar
025 Blink furnace annealing of ion-implanted silicon Kugiyama, K., Fuse, G. Japanese Journal of Applied Physics, 21 (1), L16–L18 (January 1982).CrossRefGoogle Scholar
026 Characterization of ion-implanted Si rapidly annealed with incoherent light Benton, J.L., Celler, G.K., Jacobson, D.C., Kimerling, L.C., Lischner, D.J., Miller, G.L., Robinson, Mc.D. In MRS Symposia Proceedings 1981, vol.4, pp. 765–770.CrossRefGoogle Scholar
027 Characterization of ion implanted silicon annealed with a graphite radiation source Wilson, S.R., Gregory, R.B., Paulson, W.M., Hamdi, A.H., McDaniel, F.D. IEEE Transactions on Nuclear Science, NS–30 (2), 1734–1737 (April 1983).CrossRefGoogle Scholar
028 A comparison of millisecond annealing of B implants and isothermal annealing for times of a few seconds McMahon, R.A., Hasko, D.G., Ahmed, H., Stobbs, W.M., D.J. Godfrey in MRS Symposia Proceedings 1984, vol.35, pp. 347–352.CrossRefGoogle Scholar
029 CO2 laser annealing of ion-implanted silicon: relaxation characteristics of metastable concentrations Gotzlich, J., Tsien, P.H., Henghuber, G., Ryssel, H. in Ion Implantation: Equipment and Techniques, eds. Ryssel, H., Glawischnig, H. (Springer-Verlag, Heidelberg, 1983), pp. 513–519.CrossRefGoogle Scholar
030 CW CO2-laser annealing of arsenic implanted silicon Takai, M., Tsien, P.H., Tsou, S.C., Roschenthaler, D., Ramin, M., Ryssel, H., Ruge, I. Applied Physics, 22, 129–136 (1980).CrossRefGoogle Scholar
031 CW incoherent light annealing of ion-implanted Si for VLSI applications Kwor, R., Kwong, D.L., Yeo, Y.K., Stanchina, W., Araujo, C. Electrochemical Society Extended Abstracts [Washington, D.C., 9–14 October 1983], vol.83–2, abstr. 326, p. 519.Google Scholar
032 Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon Oehrlein, G.S., Cohen, S.A., Sedgwick, T.O. Applied Physics Letters, 45 (4), 417–419 (15 August 1984).CrossRefGoogle Scholar
033 Discharge annealing of ion implanted silicon Fleddermann, C.B., lanno, N.J., Verdeyen, J.T., Streetman, B.G. in MRS Symposia Proceedings 1981, vol.4, pp. 795–800.CrossRefGoogle Scholar
034 Effect of low temperature preanneal and high temperature rapid thermal annealing on arsenic-implanted silicon Kwor, R., Kwong, D.L. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 114, p. 171.Google Scholar
035 Effect of furnace preanneal and rapid thermal annealing on arsenic-implanted silicon Kwor, R., Kwong, D.L., Ho, C.C., Tsaur, B-Y., Baumann, S. Journal of the Electrochemical Society, 132(5), 1201–1206 (May 1985).CrossRefGoogle Scholar
036 Effects of thermal and transient annealing on the redistribution of indium implanted silicon Katz, W., Smith, G.A., Reihl, R.F., Koch, E.F. in MRS Symposia Proceedings 1983, vol.23, pp. 299–302.CrossRefGoogle Scholar
037 Electron-beam annealing of ion-implanted silicon McMahon, R.A., Ahmed, H. Electronics Letters, 15(2), 45–46 (18 January 1979).CrossRefGoogle Scholar
038 Electron beam annealing of shallow BF2 implantations Jaussaud, C., Cartier, A.M., Escaron, J. in MRS Symposia Proceedings 1983, vol.23, pp. 309–314.CrossRefGoogle Scholar
039 Enhanced diffusion in short time annealed arsenic and boron ion implanted silicon Sedgwick, T.O., Cohen, S.A., Oehrlein, G., Deline, V., Kalish, R., Shatas, S.C. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 45, p. 65; full paper in VLSI Science and Technology-1984 [Electrochem. Soc. Proc. vol. 84–7, 1984], eds. K.E. Bean, G.A. Rozgonyi, pp. 192–200.Google Scholar
040 Flame annealing of arsenic and boron implanted silicon Narayan, J., Young, R.T. Applied Physics Letters, 42 (5), 466–468 (1 March 1983).CrossRefGoogle Scholar
041 Flame annealing of ion implanted silicon Narayan, J., Young, R.T. in MRS Symposia Proceedings 1982, vol.13, pp. 361–368.CrossRefGoogle Scholar
042 Germanium implantation into silicon: an alternate preamorphization/rapid thermal annealing procedure for shallow junction technolgy Sadana, D.K., Myers, E., Liu, J., Finstad, T., G.A. Rozgonyi in MRS Symposia Proceedings 1983, vol.23, pp. 303–308.CrossRefGoogle Scholar
043 Germanium implantation into silicon. An alternative preamorphization/rapid thermal annealing procedure for shallow junction formation Sadana, D.K., Maszara, W., Wortman, J.J., Rozgonyi, G.A., Chu, W.K. Journal of the Electrochemical Society, 131 (4), 943–945 (April 1984).CrossRefGoogle Scholar
044 Heat-pulse annealing of arsenic-implanted silicon with a CW arc lamp Gat, A. IEEE Electron Device Letters, EDL–2(4), 85–87 (April 1981).CrossRefGoogle Scholar
045 Impurity diffusion during RTA Fair, R.B. in MRS Symposia Proceedings 1984, vol.35, pp. 381–392.CrossRefGoogle Scholar
046 Incoherent light annealing of glow discharge PFs -implanted silicon: analysis of damage recovery and electrical activation Pedulli, L., Correra, L., Galloni, R., Adekoya, O., Bardadi, A., Muller, J.C., Siffert, P.in MRS Symposia Proceedings 1985, vol.45, pp. 363–364.CrossRefGoogle Scholar
047 Influence of rapid thermal annealing on shallow BF2 implantation into pre-amorphized silicon Maszara, W., Carter, C., Sadana, D.K., Liu, J., Ozguz, V., Wortman, J., Rozgonyi, G.A. in MRS Symposia Proceedings 1983, vol.23, pp. 285–291.CrossRefGoogle Scholar
048 Ion implantation and rapid annealing of 125 mm wafers Current, M., A. Yee Solid State Technology, 26 (10), 197–202 (October 1983).Google Scholar
049 Isothermal annealing of ion implanted silicon with a graphite radiation source Wilson, S.R., Gregory, R.B., Paulson, W.M., Hamdi, A.H., McDaniel, F.D. in MRS Symposia Proceedings 1982, vol.13, pp. 369–374.CrossRefGoogle Scholar
050 Large area electron beam annealing Moore, C.A., Rocca, J.J., Johnson, T., Collins, G.J., Russell, P.E. Applied Physics Letters, 43 (3), 290–292 (1 August 1983).CrossRefGoogle Scholar
051 Light-induced, short-time annealing of silicon-implanted layers Wouters, D., Maes, H.E. in MRS Symposia Proceedings 1984, vol.35, pp. 359–365.CrossRefGoogle Scholar
052 Mobility and carrier density of rapid isothermally annealed antimony implanted (100) and (111) silicon Jones, R.E. Jr., Li, B.Z., Oleszek, G.M. Journal of Applied Physics, 57 (8), 2802–2805 (15 April 1985).CrossRefGoogle Scholar
053 Photoluminescence from rapid thermal annealed and pulsed-laser-annealed ion-implanted Si Wagner, J., Gelpey, J.C., Hodgson, R.T. Applied Physics Letters, 45 (1), 47–49 (1 July 1984).CrossRefGoogle Scholar
054 Processing of shallow (Rp < 150 Å) implanted layers with electron beams McMillan, G.B., Shannon, J.M., Ahmed, H. in MRS Symposia Proceedings 1982, vol.13, pp. 437–442.CrossRefGoogle Scholar
055 Pulsed thermal annealing of ion-implanted silicon Scovell, P.D., Spurgin, E. J. Journal of Applied Physics, 54 (5), 2413–2418 (May 1983).CrossRefGoogle Scholar
056 Radiation annealing of boron-implanted silicon with a halogen lamp Nishiyama, K., Arai, M., Watanabe, N. Japanese Journal of Applied Physics, 19 (10), L563-L566 (October 1980).CrossRefGoogle Scholar
057 Rapid annealing of arsenic and boron-implanted silicon Narayan, J., Holland, O.W., Eby, R.E., Wortman, J.J., Ozguz, V., Rozgonyi, G.A. Applied Physics Letters, 43 (10), 957–959 (15 November 1983).CrossRefGoogle Scholar
058 Rapid annealing of implant damage using thermal radiation Fulks, R.T., Russo, C.J., Downey, D.F., Hanley, P.R., Stacy, W.T. in MRS Symposia Proceedings 1981, vol.7, pp. 395–400.CrossRefGoogle Scholar
059 Rapid annealing of ion-implanted silicon structures using a radiant light source Harrison, H.B., Grigg, M., Short, K.T., Williams, J.S., Zylewicz, A. in MRS Symposia Proceedings 1981, vol.4, pp. 771–776.CrossRefGoogle Scholar
060 Rapid annealing of silicon Hodgson, R.T., Deline, V., Mader, S.M., Moorehead, F.F., Gelpey, J. in MRS Symposia Proceedings 1983, vol.23, pp. 253–257.CrossRefGoogle Scholar
061 Rapid isothermal anneal of 75 As implanted silicon Wilson, S.R., Gregory, R.B., Paulson, W.M., Hamdi, A.H., McDaniel, F.D. Applied Physics Letters, 41 (10), 978–980 (15 November 1982).CrossRefGoogle Scholar
062 Rapid isothermal annealing of ion implantation damage using a thermal radiation source Fulks, R.T., Russo, C.J., Hanley, P.R., Kamins, T.I. Applied Physics Letters, 39 (8), 604–606 (15 October 1981).CrossRefGoogle Scholar
063 Rapid large area annealing of ion-implanted Si with incoherent light Lischner, D.J., Celler, G.K. in MRS Symposia Proceedings 1981, vol.4, pp. 759–764.CrossRefGoogle Scholar
064 Rapid thermal and pulsed laser annealing of boron fluoride-implanted silicon Narayan, J., Holland, O.W., Christie, W.H., Wortman, J.J. Journal of Applied Physics, 57 (8), 2709–2716 (15 April 1985).CrossRefGoogle Scholar
065 Rapid thermal annealing behaviors of phosphorus and antimony implants in Si Kwor, R., Ho, C.C., Polchlopek, S. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984], vol.84–2, abstr. 520, p. 762.Google Scholar
066 Rapid thermal annealing characteristics of As+- and BF2 +-implanted Si Kwor, R., Kwong, D.L., Yeo, Y.K. Applied Physics Letters, 45 (1), 77–79 (1 July 1984).CrossRefGoogle Scholar
067 Rapid thermal annealing in Si Seidel, T.E., Pal, C.S., Lischner, D.J., Maher, D.M., Knoell, R.V., Williams, J.S., Penumalli, B.R., D.C. Jacobson in MRS Symposia Proceedings 1984, vol.35, pp. 329–340.CrossRefGoogle Scholar
068 Rapid thermal annealing of BF2 +-implanted, preamorphized silicon Seidel, T.E. IEEE Electron Device Letters, EDL–4 (10), 353–355 (October 1983).CrossRefGoogle Scholar
069 Rapid thermal annealing of boron-implanted silicon using an ultrahigh power arc lamp Hodgson, R.T., Deline, V.R., Mader, S., Gelpey, J.C. Applied Physics Letters, 44 (6), 589–591 (15 March 1984).CrossRefGoogle Scholar
070 Rapid thermal annealing (RTA) of dopants implanted into preamorphized silicon Seidel, T.E., Knoell, R., Stevie, F.A., Poll, G., Schwartz, B. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 46, pp. 66–67; full paper in VLSI Science and Technology-1984, eds. K.E. Bean, G.A. Rozgonyi (Electrochem. Soc. Proc. vol. 84–7, 1984), pp. 201–210.Google Scholar
071 Rapid thermal annealing of dopants impalnted into preamorphized silicon Seidel, T.E., Knoell, R., Poli, G., Schwartz, B., Stevie, F.A., Chu, P. Journal of Applied Physics, 58 (2), 683–687 (15 July 1985).CrossRefGoogle Scholar
072 Rapid thermal annealing of ion implanted Si with tungsten-halogen lamps Celler, G.K., Benton, J.L., Jacobson, D.J., Kimerling, L.C., Lischner, D.J., Miller, G.L., Robinson, McD. Electrochemical Society Extended Abstracts [Montreal, Canada, 9–14 May 1982], vol.82–1, abstr. 180, p. 384.Google Scholar
073 Rapid thermal annealing of ion-implanted silicon and gallium arsenide Narayan, J. in MRS Symposia Proceedings 1983, vol.23, pp. 335–345.CrossRefGoogle Scholar
074 Rapid thermal annealing of preamorphized B and BF2-implanted silicon Calder, I.D., Naguib, H.M., Houghton, D., Shepherd, F.R. in MRS Symposia Proceedings 1984, vol.35, pp. 353–358.CrossRefGoogle Scholar
075 Rapid thermal annealing of silicon using an ultrahigh power arc lamp Hodgson, R.T., Baglin, J.E.E., Michel, A.E., Mader, S., Gelpey, J.C. in MRS Symposia Proceedings 1982, vol.13, pp. 355–360.CrossRefGoogle Scholar
076 Shallow boron-doped junctions in silicon Cohen, S.S., Norton, J.F., Koch, E.F., Weisel, G.J. Journal of Applied Physics, 57(4), 1200–1213 (15 February 1985).CrossRefGoogle Scholar
077 Short time annealing of As and B ion implanted Si using tungsten-halogen lamps Sedgwick, T.O., Kalish, R., Mader, S.R., Shatas, S.C. in MRS Symposia Proceedings 1983, vol.23, pp. 293–298.CrossRefGoogle Scholar
078 Solar furnace annealing of amorphous Si layers Lau, S.S., von AlImen, M., Golecki, I., Nicolet, M-A., Kennedy, E.F., Tseng, W.F. Applied Physics Letters, 35 (4), 327–329 (15 August 1979).CrossRefGoogle Scholar
079 Solar furnace annealing of amorphous Si layers Lau, S.S., von AlImen, M., Golecki, I., Nicolet, M-A. Electrochemical Society Extended Abstracts [Los Angles, CA, 14–19 October 1979], vol.79–2, abstr. 359, pp. 918–919.Google Scholar
080 Structural and electrical properties of BF2 + implanted, rapid annealed silicon Lunnon, M.E., Chen, J.T., Baker, J.E. Applied Physics Letters, 45 (10), 1056–1059 (15 November 1984).CrossRefGoogle Scholar
081 Time resolved reflectivity measurements applied to rapid isothermal annealing of ion implanted silicon Timans, P.J., McMahon, R.A., Ahmed, H. in MRS Symposia Proceedings 1985, vol.45, pp. 337–342.CrossRefGoogle Scholar
082 Transient annealing of arsenic-implanted silicon using a graphite strip heater Tsaur, B-Y., Donnelly, J.P., Fan, J.C.C., Gels, M.W. Applied Physics Letters, 39 (1), 93–95 (1 July 1981).CrossRefGoogle Scholar
083 Transient annealing of ion-implanted silicon using a scanning IR line source Liu, Y.S., Cline, H.E., Possin, G.E., Parks, H.G., Katz, W. in MRS Symposia Proceedings 1982, vol.13, pp. 425–430.CrossRefGoogle Scholar
084 Transient enhanced diffusion in arsenic-implanted short time annealed silicon Kalish, R., Sedgwick, T.O., Mader, S., Shatas, S. Applied Physics Letters, 44 (1), 107–109 (1 January 1984).CrossRefGoogle Scholar
085 Use of incoherent light for annealing implanted Si wafers and growing single-crystal Si and SiO2 Haond, M., Vu, D.P. Electronics Letters, 18 (17), 727–728 (19 August 1982).CrossRefGoogle Scholar
086 Activation and redistribution of implanted P and B in polycrystaline Si by rapid thermal processing Chow, R., Powell, R.A. Journal of Vacuum Science and Technology, A3 (3), 892–895 (May/June 1985).CrossRefGoogle Scholar
087 Activation and redistribution of phosphorus in polysilicon by rapid thermal processing Chow, R., Powell, R.A. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984), vol.84–2, abstr. 521, pp. 763–764.Google Scholar
088 Conductivity of ion implanted and rapid thermal annealed semi-insulating polysilicon Ozguz, V.H., Fulford, J.H., Wortman, J.J., Simpson, L.W., Hauser, J.R., Curran, P., Rozgonyi, G.A. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985, vol.85–1, abstr. 264, pp. 383–384.Google Scholar
089 Dopant activation and redistribution in As+-implanted polycrystalline Si by rapid thermal processing Powell, R.A., Chow, R. Journal of the Electrochemical Society, 132 (1), 194–198 (January 1985).CrossRefGoogle Scholar
090 Electrical properties of ion implanted and short-time annealed polycrystalline silicon Voelskow, M., Matthai, J., Klabes, R. Physica Status Solidi, A86 (2), 781–788 (16 December 1984).CrossRefGoogle Scholar
091 Epitaxial transformation of ion-implanted polycrystalline Si films on (100) Si substrates by rapid thermal annealing Tamura, M., Natsuaki, N., Aoki, S. Japanese Journal of Applied Physics, 24 (2), L151–L154 (February 1985).CrossRefGoogle Scholar
092 Fast diffusion of As in polycrystalline silicon during rapid thermal annealing Wilson, S.R., Paulson, W.M., Gregory, R.B., Gressett, J.D., Hamdi, A.H., McDaniel, F.D. Applied Physics Letters, 45 (4), 464–466 (15 August 1984).CrossRefGoogle Scholar
093 Grain growth during transient annealing of As-implanted polycrystalline silicon films Krause, S.J., Wilson, S.R., Paulson, W.M., Gregory, R.B. Applied Physics Letters, 45 (7), 778–780 (1 October 1984).CrossRefGoogle Scholar
094 Grain growth processes during transient annealing of As-implanted polycrystallinesilicon films Krause, S.J., Wilson, S.R., Paulson, W.M., Gregory, R.B. in MRS Symposia Proceedings 1984, vol.35, pp. 721–726.CrossRefGoogle Scholar
095 Incoherent light annealing of phosphorus-doped polycrystalline silicon Borisenko, V.E., Gribkovskii, V.V., Labunov, V.A., Samuilov, V.A., Yashin, K.D. Physica Status Solidi, A75 (1), 117–120 (16 January 1983).CrossRefGoogle Scholar
096 Infrared radiation annealing of ion-implanted polycrystalline silicon using a graphite heater Takebayashi, K., Yokoyama, T., Yoshida, M., Inoue, M. Journal of the Electrochemical Society, 130 (11), 2271–2274 (November 1983).CrossRefGoogle Scholar
097 Interface properties between incoherent-light-recrystallized polysilicon and the underlying insulator Kwong, D.L., D'Ambrose, J.J., Thompson, A.M., Nespor, J.F. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 61, p. 88.Google Scholar
098 Large area recrystallization of polysilicon with tungsten-halogen lamps Robinson, Mc. D., Lischner, D.J., Celler, G.K. Journal of Crystal Growth, 63, 484–492 (1983).CrossRefGoogle Scholar
099 Polysilicon grain growth by rapid isothermal annealing Pinizzotto, R.F., Clark, F.Y., Malhi, S.D.S., Shah, R.R. in MRS Symposia Proceedings 1983, vol.33, pp. 169–178.CrossRefGoogle Scholar
100 Properties of ion-implanted polycrystalline Si layers subjected to rapid thermal annealing Wilson, S.R., Gregory, R.B., Paulson, W.M., Krause, S.J., Gressett, J.D., Hamdi, A.H., McDaniel, F.D., Downing, R.G. Journal of the Electrochemical Society, 132 (4), 922–929 (April 1985).CrossRefGoogle Scholar
101 Properties of ion implanted polysilicon layers subjected to rapid thermal annealing Wilson, S.R., Paulson, W.M., Gregory, R.B., Krause, S.J., Gressett, J.D., McDaniel, F.D., Downing, R.G. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984], vol.84–2, abstr. 502, pp. 732–733.Google Scholar
102 Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafers Celler, G.K., Robinson, Mc. D., Lischner, D.J. Applied Physics Letters, 42 (1), 99–101 (1 January 1983).CrossRefGoogle Scholar
103 As+ implantation and transient annealing of MoSi2 thin films Agamy, S.A., Ho, V.Q., Naguib, H.M. Journal of Vacuum Science and Technology, A3 (3), 718–722 (May/June 1985).CrossRefGoogle Scholar
104 Boron redistribution during transient thermal metal silicide growth on Si Sofield, C.J., Harper, R.E., Rosser, P.J. in MRS Symposia Proceedings 1984, vol.35, pp. 445–450.CrossRefGoogle Scholar
105 Characterization of doped Si-TiSi2 bilayers formed by ion beam mixing and rapid thermal annealing Maex, K., De Keersmaecker, R.F. in MRS Symposia Proceedings 1985, vol.45, pp. 153–158.CrossRefGoogle Scholar
106 Characterization of rapidly annealed Mo-polycide Ho, V.Q., Naguib, H.M. Journal of Vacuum Science and Technology, A3 (3), 896–899 (May/June 1985).CrossRefGoogle Scholar
107 Composite TaSi2/n+ polySi formation by rapid thermal annealing Kwong, D.L., Kwor, R., Tsaur, B-Y. IEEE Electron Device Letters, EDL–5 (5), 133–135 (May 1984).CrossRefGoogle Scholar
108 Conductivity changes in tungsten silicide films due to rapid thermal processing Jayadev, T.S., Joshi, A. Electronics Letters, 20 (14), 604–606 (5 July 1984).CrossRefGoogle Scholar
109 Dopant redistribution in titanium silicide/n+ polysilicon bilayers during rapid thermal processing IIICooper, C.B., Powell, R.A., Chow, R. in MRS Symposia Proceedings 1983, vol.23, pp. 739–746.CrossRefGoogle Scholar
110 Electrical characterization of Ti-silicided shallow junctions by ion-beam mixing and rapid thermal annealing Kwong, D.L., Meyers, D.C., Alvi, N.S. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 October 1985], vol.85–2, abstr. 290, p. 441.Google Scholar
111 Epitaxial PtSi and Pd2 Si formed by rapid thermal annealing Larsen, A.N., Chevallier, J., Pedersen, A.S. Materials Letters, 3 (5/6), 242–246 (April 1985).CrossRefGoogle Scholar
112 Fast radiative processing of platinum silicide Van der Spiegel, J., Wei, C.S., Santiago, J.J., Seiberling, L.E. Journal of Applied Physics, 57 (2), 607–609 (15 January 1985).CrossRefGoogle Scholar
113 Fast radiative processing of titanium silicides under vacuum Santiago, J.J., Wei, C.S., Van der Spiegel, J. Materials Letters, 2 (6A/B), 477–482 (September 1984).CrossRefGoogle Scholar
114 Formation of palladium silicide by rapid thermal annealing Levy, D., Grob, A., Grob, J.J., Ponpon, J.P. Applied Physics A, A35 (3), 141–144 (November 1984).CrossRefGoogle Scholar
115 Formation of titanium silicide films by rapid thermal processing Powell, R.A., Chow, R., Thridandam, C., Fulks, R.T., Blech, J.A., Pan, J-D.T. IEEE Electron Device Letters, EDL–4 (10), 380–382 (October 1983).CrossRefGoogle Scholar
116 Formation of titanium silicides by fast radiative processing Wei, C.S., Van der Spiegel, J., Santiago, J.J., Seiberling, L.E. Applied Physics Letters, 45 (5), 527–528 (1 September 1984).CrossRefGoogle Scholar
117 Graphite strip rapid isothermal annealing of tantalum silicide Li, B.Z., Jones, R.E. Jr., Daneshvar, K., David, J. Journal of Applied Physics, 56 (4), 1242–1244 (15 August 1984).CrossRefGoogle Scholar
118 Growth of nickel silicides on silicon by short duration incoherent light exposure Larsen, A.N., Chevallier, J., Sorenson, G. in MRS Symposia Proceedings 1983, vol.23, pp. 727–732.CrossRefGoogle Scholar
119 Influence of the interfacial oxide on titanium silicide formation by rapid thermal annealing Pramanik, D., Saxena, A.N., Wu, O.K., Peterson, G.G., Tanielian, M. Journal of Vacuum Science and Technology, B2 (4), 775–780 (October-December 1984).CrossRefGoogle Scholar
120 MoSi2 formation by rapid isothermal annealing Fulks, R.T., Powell, R.A., Stacy, W.T. IEEE Electron Device Letters, EDL–3 (7), 179–181 (July 1982).CrossRefGoogle Scholar
121 Molybdenum silicide formation by ion beam mixing and rapid thermal annealing Kwong, D.L., Meyers, D.C., Alvi, N.S. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985, vol.85–1, abstr. 222, pp. 315–316.Google Scholar
122 On the rapid heat lamp annealing of tantalum silicide/silicon films Maa, J.S., Smith, R.T., McGinn, J.T., Reed, L.H. Materials Letters, 3 (7/8), 314–318 (May 1985).CrossRefGoogle Scholar
123 Rapid annealing of titanium silicide using a graphite strip heater Jones, R.E. Jr., Li, B.Z., Daneshvar, K., Davis, J. Journal of Applied Physics, 56 (12), 3465–3470 (15 December 1984).CrossRefGoogle Scholar
124 Rapid isothermal annealing of tantalum silicide Daneshvar, K., Jones, R.E. Jr. Nuclear Instruments and Methods in Physics Research, B10/11 (1), 529–531 (15 May 1985).CrossRefGoogle Scholar
125 Rapid thermal annealing of composite TaSi2 /n+ poly-Si silicide films Kwong, D.L., Kwor, R., Tsaur, B-Y., Daneshvar, K. in MRS Symposia Proceedings 1983, vol.23, pp. 733–738.CrossRefGoogle Scholar
126 Rapid-thermal annealing of a polysilicon-stacked emitter structure Natsuaki, N., Tamura, M., Miyazaki, T., Yanagi, Y. in Technical Digest of International Electron Devices Meeting 1983 (IEDM 83), Washington, D.C., 5–7 December 1983, (IEEE, 1983), pp. 662–665.Google Scholar
127 Rapid thermal annealing of co-sputtered tantalum silicide films Kwong, D.L. Thin Solid Films, 121(1), 43–50 (9 November 1984).CrossRefGoogle Scholar
128 Rapid thermal annealing of ion-implanted Ti films on Si Pramanik, D., Deal, M., Saxena, A.N. in Advanced Applications of Ion Implantation, eds. Current, M.I., Sadana, D.K. [Proceedings of SPIE, vol.530, Los Angeles, CA, 23–25 January 1985], pp. 159–164.CrossRefGoogle Scholar
129 Rapid thermal annealing of TiSi2 for interconnects Rosser, P.J., Tomkins, G.J. in MRS Symposia Proceedings 1984, vol.35, pp. 457–464.CrossRefGoogle Scholar
130 Rapid thermal processing of titanium silicide films Powell, R.A., IllCooper, C.B., Chow, R. Semiconductor International, 7 (5), 168–173 (May 1984).Google Scholar
131 Reactions of thin-film titanium on silicon studies by Raman spectroscopy Nemanich, R.J., Fulks, R.T., Stafford, B.L., Vander, H.A. Plas Applied Physics Letters, 46 (7), 670–672 (1 April 1985).CrossRefGoogle Scholar
132 Refractory metal silicide formation by ion beam mixing and rapid thermal annealing Kwong, D.L., Meyers, D.C., Alvi, N.S., Li, L.W., Norbeck, E. Applied Physics Letters, 47 (7), 688–691 (1 October 1985).CrossRefGoogle Scholar
133 Refractory metals and metal silicides for VLSI devices Chen, J.Y., Roth, L.B. Solid State Technology, 27(8), 145–149 (August 1984).Google Scholar
134 Selective tungsten silicide formation by ion-beam mixing and rapid thermal annealing Tsaur, B-Y., Chen, C.K., Anderson, C.H. Jr., Kwong, D.L. Journal of Applied Physics, 57 (6), 1890–1894 (15 March 1985).CrossRefGoogle Scholar
135 Self aligned Ti silicide formed by rapid thermal annealing Brat, T., Osburn, C.M., Finstad, T., Liu, J. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985], vol.85–1, abstr. 26 265, pp. 385–386.Google Scholar
136 Self-aligned titanium silicidation by lamp annealing Tsukamoto, K., Okamoto, T., Shimizu, M., Matsukawa, T., Harada, H. Extended Abstracts, 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, Japan, 1984, pp. 47–50.Google Scholar
137 Short time annealing of coevaporated tungsten silicide films Sedgwick, T.O., d'Heurle, F.M., Cohen, S.A. Journal of the Electrochemical Society, 131 (10), 2446–2451 (October 1984).CrossRefGoogle Scholar
138 Simultaneous formation of silicide ohmic contacts and shallow p+-n junctions by ionbeam mixing and rapid thermal annealing Kwong, D.L., Meyers, D.C., Alvi, N.S. IEEE Electron Device Letters, EDL–6 (5), 244–246 (May 1985).CrossRefGoogle Scholar
139 Study of titanium and nickel silicide formation by Q-switched laser and multiscanning e-beam Bentini, G.G., Nipoti, R., Drigo, A.V., Cohen, C. in MRS Symposia Proceedings 1982, vol.4, pp. 443–448.CrossRefGoogle Scholar
140 TaSi2 formation by rapid thermal processing Kwong, D.L., Kwor, R., Tasur, B-Y. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 100, p. 148.Google Scholar
141 Titanium disilicide formation by wide-area electron beam irradiation Moore, C.A., Rocca, J.J., Collins, G.J., Russell, P.E., Geller, J.D. Applied Physics Letters, 45 (2), 169–171 (15 July 1984).CrossRefGoogle Scholar
142 Titanium silicidation by halogen lamp annealing Okamoto, T., Shimizu, M., Tsukamoto, K., Matsukawa, T. in MRS Symposia Proceedings 1984, vol.35, pp. 471–476.CrossRefGoogle Scholar
143 Titanium silicidation by halogen lamp annealing Okamoto, T., Tsukamoto, K., Shimizu, M., Matsukawa, T. Journal of Applied Physics, 57 (12), 5251–5255 (15 June 1985).CrossRefGoogle Scholar
144 Transient processing of titanium silicides in a non-isothermal reactor Wei, C.S., Van der Spiegel, J., Santiago, J., Seiberling, L.E. in MRSC Symposia Proceedings 1984, vol.35, pp. 465–470.CrossRefGoogle Scholar
145 Transient thermal annealing of co-sputtered tantalum silicide films Kwong, D.L., Kwor, R., Araujo, C., Jones, R.E., Meyers, D.C. Electrochemical Society Extended Abstracts [Washington, D.C., 9–14 October 1983], vol.83–2, abstr. 288, p. 448.Google Scholar
146 Use of rapid thermal processing to control dopant redistribution during formation of tantalum and molybdenum silicide/n+ polysilicon bilayers IIICooper, C.B., Powell, R.A. IEEE Electron Device Letters, EDL–6 (5), 234–236 (May 1985).CrossRefGoogle Scholar
147 A rapid isothermal annealing for a VLSI interconnection technology Nishimura, H., Suizu, Y., Tsujimaru, T. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984), vol.84–2, abstr. 519, pp. 760–761.Google Scholar
148 Alloying of AQ-Cu-Si metallization by rapid thermal annealing Alvi, N.S., Kwong, D.L. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985], vol.85–1, abstr. 263, p. 382.Google Scholar
149 Contact resistance of AQ/Si ohmic electrodes formed by rapid lamp sintering Hara, T., Suzuki, H., Furukawa, M., Amemiya, K. Japanese Journal of Applied Physics, 22 (6), L340-L342 (June 1983).CrossRefGoogle Scholar
150 CW-CO2-laser alloying of Au-Ge-Ni ohmic contacts on GaAs Tsou, S., Wang, W., Lin, C., Xia, G.in Ion Implantation: Equipment and Techniques, eds, Ryssel, H., Glawischnig, H. (Springer-Verlag, Heidelberg, 1983), pp. 538–542.CrossRefGoogle Scholar
151 Elimination of hillocks on AQ-Si metallization by fast-heat-pulse alloying Faith, T.J., Wu, C.P. Applied Physics Letters, 45 (4), 470–472 (15 August 1984).CrossRefGoogle Scholar
152 Grain growth in AV alloy conductors as a result of rapid annealing Towner, J.M., van de Ven, E.P., Hopkins, C.G. Applied Physics Letters, 44 (2), 198–199 (15 January 1984).CrossRefGoogle Scholar
153 Low resistance AQ/Si ohmic contacts on boron implanted shallow p+ Si layers formed by halogen lamp annealing Hara, T., Ohtsuka, N., Enomoto, S., Hirayama, T., Amemiya, K., Furukawa, M. Japanese Journal of Applied Physics, 22 (11), L683–L685 (November 1983).CrossRefGoogle Scholar
154 Rapid thermal annealing of AV-Si contacts Pai, C.S., Cabreros, E., Lau, S.S., Seidel, T.E., Suni, I. Applied Physics Letters, 46 (7), 652–654 (1 April 1985).CrossRefGoogle Scholar
155 Use of refractory metal and electron-beam sintering to reduce contact resistance for VLSI Chen, J. Y-T., Rensch, D.B. IEEE Transactions on Electron Devices, ED–30 (11), 1542–1550 (November 1983).CrossRefGoogle Scholar
156 Annealing effects in silicon nitride encapsulant films Szweda, R. Physica, 129B, 435–439 (March 1985).Google Scholar
157 Compositional studies of thermally nitrided silicon dioxide (nitroxide) Moslehi, M.M., Han, C.J., Saraswat, K.C., Helms, C.R., Shatas, S. Journal of the Electrochemical Society, 132 (9), 2189–2197 (September 1985).CrossRefGoogle Scholar
158 Electrical and structural characteristics of thin nitrided gate oxides prepared by rapid thermal nitridation Nulman, J., Krusius, J.P., Rathbun, L. in Technical Digest of IEEE International Electron Devices Meeting, San Francisco, CA, 9–12 December 1984 (IEDM 84), pp. 169–172.Google Scholar
159 High-temperature rapid thermal nitridation of silicon dioxide for future VLSI applications Chang, C.C., Kamgar, A., Kahng, D. IEEE Electron Device Letters, EDL–6 (9), 476–478 (September 1985).CrossRefGoogle Scholar
160 Rapid reflow of borophosphosilicate glass Gigante, J.R., Geneczko, J.M., Ghoshtagore, R.N. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 October 1985, vol.85–2, abstr. 255, pp. 382–383.Google Scholar
161 Rapid thermal annealing of deposited SiO2 films Wong, J., Lu, T-M., Cohen, S.S., Mehta, S. in MRS Symposia Proceedings 1984, vol.35, pp. 515–520.CrossRefGoogle Scholar
162 Rapid thermal nitridation of thin thermal silicon dioxide films Nulman, J., Krusius, J.P. Applied Physics Letters, 47 (2), 148–150 (15 July 1985).CrossRefGoogle Scholar
163 Rapid thermal processing of gate dielectrics Gat, A. and Nulman, J. Semiconductor International, 8 (5), 120–123 (May 1985).Google Scholar
164 Rapid thermal processing of thin gate dielectrics. Oxidation of silicon Nulman, J., Krusius, J.P., Gat, A. IEEE Electron Device Letters, EDL–6 (5), 205–207 (May 1985).CrossRefGoogle Scholar
165 Rapid thermal reflow of PSG films Mercier, J.S., Beerkens, R.P., Calder, I.D., Naguib, H.M. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984], vols. 84–2, abstr. 420, pp. 607–608.Google Scholar
166 Reduction of electron and hold trapping in SiO2 by rapid thermal annealing Weinberg, Z.A., Young, D.R., Calise, J.A., Cohen, S.A., DeLuca, J.C., Deline, V.R. Applied Physics Letters, 45 (11), 1204–1206 (1 December 1984).CrossRefGoogle Scholar
167 Reflow of PSG by rapid thermal annealing Alvi, N.S., Kwong, D.L. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 October 1985], vols. 85–2, abstr. 249, p. 373.Google Scholar
168 RTA effect on thin gate oxides Finn, M.A., Coe, M.E. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 October 1985], vol.85–2, abstr. 250, pp. 374–375.Google Scholar
169 Transient and conventional thermal annealing of paramagnetic oxygen vacancy effects in ion implanted amorphous SiO2 Golanski, A., Chan-Tung, N., Nicolle, T. in MRS Symposia Proceedings 1985, vol.45, pp. 355–360.CrossRefGoogle Scholar
170 A comparison of rapid thermal annealing and controlled atmosphere annealing of Siimplanted GaAs Kanber, H., Cipolli, R.J., Henderson, W.B., Whelan, J.M. Journal of Applied Physics, 57(10), 4732–4737 (15 May 1985).CrossRefGoogle Scholar
171 Activation of low dose silicon implants in GaAs by multiply scanned electron beams Shah, N.J., Ahmed, H., Sanders, I.T., Singleton, J.F. Electronics Letters, 16 (11), 433–434 (22 May 1980).CrossRefGoogle Scholar
172 Annealing of high dose implanted GaAs with halogen lamps Nissim, Y.I., Joukoff, B., Sapriel, J., Duhamel Journal de Physique, N., Colloque C5, suppl. to no. 10, book 44, 247–251 (October 1983).CrossRefGoogle Scholar
173 Annealing of high dose implanted GaAs with halogen lamps Nissim, Y.I., Joukoff, B., Sapriel, J., Henoc, P. in MRS Symposia Proceedings 1983, vols. 23, pp. 675–680.CrossRefGoogle Scholar
174 Annealing of Mg implants in GaAs using incoherent radiation Blunt, R.T., Szweda, R., Lamb, M.S.M., Cullis, A.G. Electronics Letters, 20(11), 444–446 (24 May 1984).CrossRefGoogle Scholar
175 Annealing of zinc-implanted GaAs Barrett, N.J., Grange, J.D., Sealy, B.J., Stephens, K.G. Journal of Applied Physics, 57 (12), 5470–5476 (15 June 1985).CrossRefGoogle Scholar
176 Band-to-band luminescence of ion-implanted InP after rapid lamp annealing Kirillov, D., Merz, J., Kalish, R., Ron, A. Applied Physics Letters, 44 (6), 609–610 (15 March 1984).CrossRefGoogle Scholar
177 Comparison of heat-pulse and furnace isothermal anneals of Be implanted InP Molnar, B., Kelner, G., Ramseyer, G.L., Morrison, G.H., Shatas, S.C. in MRS Symposia Proceedings 1983, vol.23, pp. 329–334.CrossRefGoogle Scholar
178 Correlation of RBS and electrical measurements on Si implanted InP following rapid thermal and furnace annealing Bahir, G., Merz, J.L., Abelson, J.R., Sigmon, T.W. in MRS Symposia Proceedings 1985, vol.45, pp. 297–302.CrossRefGoogle Scholar
179 CW beam processing of gallium arsenide Nissim, Y.I., Gibbons, J.F. in CW Beam Processing of Silicon and Other Semiconductors [Semiconductors and Semimetals, vol.17), ed. Gibbons, J.F. (Academic, Orlando, FL, 1984), pp. 397–446.CrossRefGoogle Scholar
180 Diffusion of silicon in GaAs using rapid thermal processing: experiment and model Greiner, M.E., Gibbons, J.F. Applied Physics Letters, 44 (8), 750–752 (15 April 1984).CrossRefGoogle Scholar
181 Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp Tabatabaie-Alavi, K., Choudhury, A.N.M.M., Kanbe, H., Fonstad, C.G., Gelpey, J.C. Applied Physics Letters, 43 (7), 647–649 (1 October 1983).CrossRefGoogle Scholar
182 Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing Kuzuhara, M., Kohzu, H., Takayama, Y. Journal of Applied Physics, 54 (6), 3121–3124 (June 1983).CrossRefGoogle Scholar
183 Electron beam annealing of selenium-implanted gallium arsenide Shah, N.J., Ahmed, H. Applied Physics Letters, 39 (4), 322–324 (15 August 1981).CrossRefGoogle Scholar
184 Enhanced activation of Zn-implanted GaAs Davies, D.E., McNally, P.J. Applied Physics Letters, 44 (3), 304–306 (1 February 1984).CrossRefGoogle Scholar
185 Flash annealing of copper and krypton ion implants in cadmium telluride James, K.M., Merz, J.L., Jones, C.E. Applied Physics Letters, 46 (4), 424–426 (15 February 1985).CrossRefGoogle Scholar
186 High-quality Si-implanted GaAs activated by a two-step rapid thermal annealing technique Seo, K.S., Dhar, D., Bhattacharya, P.K. Applied Physics Letters, 47 (5), 500–502 (1 September 1985).CrossRefGoogle Scholar
187 Hot-plate alloying for ohmic contacts to GaAs Henry, H.G., Dawson, D.E., Lemnios, Z.J., Kim, H. IEEE Transactions on Electron Devices, ED–31 (8), 1100–1103 (August 1984).CrossRefGoogle Scholar
188 Implantation annealing in GaAs by incoherent light Davies, D.E., McNally, P.J., Ryan, T.G., Soda, K.J., J.J. Comer Institute of Physics Conference Series No. 65 [Proceedings, International Symposium on GaAs and Related Compounds, Albuquerque, NM, 1982), 1983, pp. 619–625.Google Scholar
189 Incoherent annealing of implanted layers in GaAs Davies, D.E., McNally, P.J., Lorenzo, J.P., Julian, M. IEEE Electron Device Letters, EDL–3 (4), 102–103 (April 1982).CrossRefGoogle Scholar
190 Incoherent focused radiation for activation of implanted InP Lorenzo, J.P., Davies, D.E., Soda, K.J., Ryan, T.G., McNally, P.J. in MRS Symposia Proceedings 1982, vol.13, pp. 683–690.CrossRefGoogle Scholar
191 Infrared rapid annealing of Zn-implanted GaAs Suzuki, T., Sakurai, H., Arai, M. Applied Physics Letters, 43 (10), 951–953 (15 November 1983).CrossRefGoogle Scholar
192 Infrared rapid thermal annealing of Si-implanted GaAs Kuzuhara, M., Kohzu, H., Takayama, Y. Applied Physics Letters, 41 (8), 755–758 (15 October 1982).CrossRefGoogle Scholar
193 Ion implantation of Si and Se donors in In0.53 Ga0.47 As Penna, T., Tell, B., Liao, A.S.H., Bridges, T.J., Burkhardt, G.J. Journal of Applied Physics, 57 (2), 351–354 (15 January 1985).CrossRefGoogle Scholar
194 Ion implantation of silicon in gallium arsenide: damage and annealing characterizations Pribat, D., Dieumegard, D., Croset, M., Cohen, C., Nipoti, R., Siejka, J., Bentini, G.G., Correra, L., Servidori, M. Nuclear Instruments & Methods in Physics Research, 209/210 (pt. 2), 737–742 (May, 1983).CrossRefGoogle Scholar
195 IR radiation transient annealing of silicon implanted Sl gallium arsenide Ezis, A., Yeo, Y.K., Park, Y.S. in MRS Symposia Proceedings 1983, vol.23, pp. 681–686.CrossRefGoogle Scholar
196 Luminescent of Si-implanted InP after rapid thermal annealing Kirillov, D., Merz, J.L. in MRS Symposia Proceedings 1984, vol.35, pp. 477–482.CrossRefGoogle Scholar
197 Luminescence study of rapid lamp annealing of Si-implanted InP Kirillov, D., Merz, J.L., Kalish, R., Shatas, S. Journal of Applied Physics, 57 (2), 531–536 (15 January 1985).CrossRefGoogle Scholar
198 Monolayer surface doping of GaAs from a plated zinc source Dobkin, D.M., Gibbons, J.F. Applied Physics Letters, 44 (9), 884–886 (1 May 1984).CrossRefGoogle Scholar
199 Multiply scanned electron beam annealing of Si implanted GaAs Bujatti, M., Cetronio, A., Selenia, S.P.A., Nipoti, R., Olzi, E. in MRS Symposia Proceedings 1981, vol.4, pp. 695–700.CrossRefGoogle Scholar
200 Neutron activation measurements of As and Ga loss during transient annealing of GaAs Rose, A., Pollock, J.T.A., Scott, M.D., Adams, F.M., Williams, J.S., Lawson, E.M. in MRS Symposia Proceedings 1982, vol.13, pp. 633–640.CrossRefGoogle Scholar
201 Nonalloyed ohmic contacts to Si-implanted GaAs activated using SiOxNy capped infrared rapid thermal annealing Kuzhuhara, M., Nozaki, T., Kohzu, H. Journal of Applied Physics, 58 (3), 1204–1209 (1 August 1985).CrossRefGoogle Scholar
202 Optical furnace annealing Barrett, N.J., Bartle, D.C., Todd, A.G., Grange, J.D. in MRS Symposia Proceedings 1984, vol.35, pp. 451–455.CrossRefGoogle Scholar
203 Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs Haydl, W.H. IEEE Electron Device Letters, EDL–5 (3), 78–81 (March 1984).CrossRefGoogle Scholar
204 Proximity annealing of sulfur-implanted gallium arsenide using a strip heater Banerjee, S., Baker, J. Japanese Journal of Applied Physics, 24 (5), L377–L379 (May 1985).CrossRefGoogle Scholar
205 Radiation annealing of GaAs implanted with Si Arai, M., Nishiyama, K., Watanabe, N. Japanese Journal of Applied Physics, 20 (2), L124–L126 (February 1981).CrossRefGoogle Scholar
206 Radiation annealing of Si- and S-implanted GaAs Ito, K., Yoshida, M., Otsubo, M., Murotani, T. Japanese Journal of Applied Physics, 22 (5), L299–L300 (May 1983).CrossRefGoogle Scholar
207 Radiation annealing of silicon-implanted GaAs with a CW Xe arc lamp Lin, M.S., Hsieh, B.C., Peng, C.H., Lou, J.C. in Ion Implantation: Equipment and Techniques, eds. Ryssel, H. Glawischnig, H. (Springer-Verlag, Heidelberg, 1983) pp. 498–503.CrossRefGoogle Scholar
208 Raman scattering and luminescence study of rapid annealing and laser irradiation effects in ion implanted InP Kirillov, D., Merz, J.L. in MRS Symposia Proceedings 1983, vol.23, pp. 707–712.CrossRefGoogle Scholar
209 Raman vibrational studies of transient annealing of GaAs amorphous thin films Sapriel, J., Nissim, Y.I., Joukoff, B., Dudar, J.L., Abraham, S., Beserman Journal de Physique, R., Colloque C5, suppl. to no. 4, book 45, 75–79 (April 1984).CrossRefGoogle Scholar
210 Rapid capless annealing of 28Si, 64Zn and 9 Be implants in GaAs Liu, S.G., Narayan, S.Y. Journal of Electronic Materials, 13 (6), 897–911 (November 1984).CrossRefGoogle Scholar
211 Rapid isothermal annealing of Si implanted semi-insulating GaAs by means of high frequency induction heating Cetronio, A., Bujatti, M., D'Eustacchio, P., Ciceroni, S. in MRS Symposia Proceedings 1982, vol.13, pp. 641–646.CrossRefGoogle Scholar
212 Rapid thermal anneal and furnace anneal of silicon and beryllium implanted gallium arsenide Yuen, A.T., Long, S.I. in MRS Symposia Proceedings 1985, vol.45, pp. 285–290.CrossRefGoogle Scholar
213 Rapid thermal annealing in III–V compounds Davies, D.E. in MRS Symposia Proceedings 1985, vol.45, pp. 261–272.CrossRefGoogle Scholar
214 Rapid thermal annealing of III–V compound materials Kuzuhara, M., Kohzu, H., Takayama, Y. in MRS Symposia Proceedings 1983, vol.23, pp. 651–662.CrossRefGoogle Scholar
215 Rapid thermal annealing of Be, Si and Zn implanted GaAs using an ultrahigh power argon arc lamp Tabatabaie-Alavi, K., Choudhury, A.N.M.M., Fonstad, C.G., Gelpey, J.C. Applied Physics Letters, 43 (5), 505–507 (1 September 1983).CrossRefGoogle Scholar
216 Rapid annealing of GaAs and related compounds Williams, J.S., Pearton, S.J. in MRS Symposia Proceedings 1984, vol.35, pp. 427–438.CrossRefGoogle Scholar
217 Rapid thermal annealing of ion implanted GaAs and InP Vaidyanathan, K.V., Dunlap, H.L. in MRS Symposia Proceedings 1983, vol.23, pp. 687–692.CrossRefGoogle Scholar
218 Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp Choudhury, A.N.M., Tabatabaie-Alavi, K., Fonstad, C.G., Gelpey, J.C. Applied Physics Letters, 43 (4), 381–383 (15 August 1983).CrossRefGoogle Scholar
219 Rapid thermal annealing of selenium implanted InP Gill, S.S., Sealy, B.J. Journal de Physique, Colloque C5, suppl. to no. 10, book 44, 253–259 (October 1983).CrossRefGoogle Scholar
220 Rapid thermal annealing of Si-implanted GaAs Rosenblatt, D.H., Hitchens, W.R., Shatas, S., Gat, A., Betts, D.A. in MRS Symposia Proceedings 1983, vol.23, pp. 669–674.CrossRefGoogle Scholar
221 Rapid thermal annealing of Si+ implanted GaAs in the presence of arsenic pressure by GaAs powder Hiramoto, T., Saito, T., Ikoma, T. Japanese Journal of Applied Physics, 24 (3), L193–L195 (March 1985).CrossRefGoogle Scholar
222 Rapid thermal-pulsed diffusion of Zn into GaAs Tiku, S.K., Delaney, J.B., Gabriel, N.S., Yuan, H.T. in MRS Symposia Proceedings 1984, vol.35, pp. 483–488.CrossRefGoogle Scholar
223 Self-compensation in thermal pulse annealed Si implanted GaAs Tiku, S.K., Duncan, W.M. Electrochemical Society Extended Abstracts [New Orleans, LA, 7-12 October 1984], vol.84–2, abstr. 451, p. 647.Google Scholar
224 Shallow beryllium implantation in GaAs annealed by rapid thermal annealing Chambon, P., Berth, M., Prevot, B. Applied Physics Letters, 46 (2), 162–164 (15 January 1985).CrossRefGoogle Scholar
225 Study of dielectric caps for incoherent lamp annealing of InP Soda, K.J., Lorenzo, J.P., Davies, D.E., Ryan, T.G. in MRS Symposia Proceedings 1983, vol.23, pp. 693–698.CrossRefGoogle Scholar
226 Thermal pulse annealing of boron-implanted HgCdTe Conway, K.L., Opyd, W.G., Greiner, M.E., Gibbons, J.F., Sigmon, T.W., Bubulac, L.O. Applied Physics Letters, 41 (8), 750–752 (15 October 1982).CrossRefGoogle Scholar
227 Thermal pulse annealing of Hg1−xCdxTe Dimiduk, K.C., Opyd, W.G., Greiner, M.E., Gibbons, J.F., Sigmon, T.W. in MRS Symposia Proceedings 1982, vol.13, pp. 671–676.CrossRefGoogle Scholar
228 Thermal pulse diffusion of Zn in GaAs from an elemental source Dobkin, D., Gibbons, J.F. Journal of the Electrochemical Society, 131 (7), 1699–1702 (July 1984).CrossRefGoogle Scholar
229 Transient annealing of indium phosphide Lile, D.L., Collins, D.A., Zeisse, C.R. IEEE Electron Device Letters, EDL–4 (7), 231–233 (July 1983).CrossRefGoogle Scholar
230 Transient annealing of ion implanted gallium arsenide Williams, J.S. in MRS Symposia Proceedings 1982, vol.13, pp. 621–632.CrossRefGoogle Scholar
231 Transient annealing of ion implanted indium phosphide Gill, S.S., Sealy, B.J. Journal of Crystal Growth, 64 (1), 174–180 (1983).CrossRefGoogle Scholar
232 Transient annealing of selenium-implanted gallium arsenide using a graphite strip heater Chapman, R.L., Fan, J.C.C., Donnelly, J.P., Tsaur, B-Y. Applied Physics Letters, 40 (9), 805–807 (1 May 1982).CrossRefGoogle Scholar
233 Transient capless annealing of ion-implanted GaAs Clarke, R.C., Eldridge, G.W. IEEE Transactions on Electron Devices, ED–31 (8), 1077–1082 (August 1984).CrossRefGoogle Scholar
234 Xe-lamp-light annealing of ion-implanted GaAs Lin, M.S., Hseih, B.C., Chan, C.C. Electrochemical Society Extended Abstracts [Denver, CO, 11-16 October 1981), vol.81–2, abstr. 327, pp. 895–806.Google Scholar
235 Zn-impalnted GaAs with minimized annealing redistribution Davies, D.E., McNally, P.J. IEEE Electron Device Letters, EDL–4 (10), 356–357 (October 1983).CrossRefGoogle Scholar
236 Comparative structural and electrical characterization of scanning-electron- and pulsedlaser-annealed silicon McMahon, R.A., Ahmed, H., Cullis, A.G. Applied Physics Letters, 37 (11), 1016–1018 (1 December 1980).CrossRefGoogle Scholar
237 A cross-sectional TEM and glancing angle XRD study of rapid-thermal-annealed Ta/Si multilayers Natan, M. Materials Letters, 3 (7/8), 319–324 (May 1985).CrossRefGoogle Scholar
238 Crystallographic slip in GaAs wafers annealed using incoherent radiation Blunt, R.T., Lamb, M.S.M., Szweda, R. Applied Physics Letters, 47 (3), 304–306 (1 August 1985).CrossRefGoogle Scholar
239 Defect control during epitaxial regrowth by rapid thermal annealing Baumgart, H., Celler, G.K., Lischner, D.J., Robinson, McD., Sheng, T.T. in MRS Symposia Proceedings 1982, vol.13, pp. 349–354.CrossRefGoogle Scholar
240 Defects introduced in silicon wafers during rapid isothermal annealing: thermoelastic and thermoplastic effects Bentini, G., Correra, L., Donolato, C. Journal of Applied Physics, 56 (10), 2922–2929 (15 November 1984).CrossRefGoogle Scholar
241 Dynamic annealing phenomena and the origin of RTA-induced “hairpin” dislocations Maszara, W., Sadana, D.K., Rozgonyi, G.A., Sands, T., Washburn, J., Wortman, J.J. In MRS Symposia Proceedings 1984, vol.35, pp. 277–285.CrossRefGoogle Scholar
242 Effect of heating rate and annealing temperature on twin formation in As+ implanted (111) silicon Shih, Y.C., Washburn, J., Shatas, S.C. in Advanced Semiconductor Processing and Characterization of Electronic and Optical Materials [SPIE Proceedings, vol.463, 1984], pp. 93–98.Google Scholar
243 Electronic defects in CW transient thermal processed silicon Johnson, N.M. in CW Beam Processing of Silicon and Other Semiconductors [Semiconductors and Semimetals, vol.17], ed. Gibbons, J.F. (Academic, Orlando, FL, 1984), pp. 177–227.CrossRefGoogle Scholar
244 Electronic defects in silicon after transient isothermal annealing Pensl, G., Schulz, M., Stolz, P., Johnson, N.M., Gibbons, J.F., Hoyt, J. in MRS Symposia Proceedings 1983, vol.23, pp. 347–358.CrossRefGoogle Scholar
245 Electronic defects in transient, thermally-processed semiconductors Johnson, N.M. in MRS Symposia Proceedings 1984, vol.35, pp. 265–275.CrossRefGoogle Scholar
246 Microstructure of implanted and rapid thermal annealed SIPOS Rozgonyi, G.A. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12-17 May 1985], vol.85–1, abstr. 258, pp. 374–375.Google Scholar
247 The microstructure of transiently annealed donor implants in GaAs Shahdid, M.A., Bensalem, R., Sealy, B.J. in MRS Symposia Proceedings 1984, vol.35, pp. 489–495.CrossRefGoogle Scholar
248 Near-surface defects formed during rapid thermal annealing of preamorphized and BF2 + implanted silicon Sands, T., Washburn, J., Gronsky, R., Sadana, D.K., Rozgonyi, G.A. Applied Physics Letters, 45 (9), 982–984 (1 November 1984).CrossRefGoogle Scholar
249 Observation of slip dislocations in (100) and (111) silicon wafers after rapid thermal processing Ritz, K.N., Delfino, M., Tracy, W.T., Cooper, C.B. III, Powell, R.A. Electrochemical Society Extended Abstracts [New Orleans, LA, 7–12 October 1984], vol.84–2, abstr. 462, pp. 665–666.Google Scholar
250 On the origins of structural defects in BF2 +-implanted and rapidly annealed silicon: conditions for defect-free regrowth Sands, T., Washburn, J., Myers, E., Sadana, D.K. Nuclear Instruments & Methods in Physics Research, Sec. B: Beam Interactions with Materials and Atoms, B7 (8), 337–341 (March 1985).CrossRefGoogle Scholar
251 Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon Carter, C., Maszara, W., Sadana, D.K., Rozgonyi, G.A., Liu, J., Wortman, J. Applied Physics Letters, 44 (4), 459–461 (15 February 1984).CrossRefGoogle Scholar
252 Transmission electron microscopy and high resolution electron microscopy studies of shallow (Rp ˜ 20 nm) As and B implanted and electron beam annealed silicon McMillan, G.B., Smith, D.J., Gowers, J.P., Ahmed, H. Applied Physics Letters, 44 (11), 1081–1083 (May 1984).CrossRefGoogle Scholar
253 Transient annealing of implanted silicon: microscopic analysis and comparison with electrical characteristics Boissy, M.C., Ruterana, P., Nouet, G. in Microscopy of Semiconducting Materials 1983 [3rd Oxford Conference, Oxford, England, 21–23 March 1983], eds. Cullis, A.G., Davidson, S.M., Booker, G.R. (Institute of Physics, 1983), pp. 179–182.Google Scholar
254 Annealing of implantation damage in integrated-circuit devices using an incoherent light source Powell, R.A., Fuiks, R.T., Kamins, T.I. Journal of Vacuum Science and Technology, 20 (1), 33–36 (January 1982).CrossRefGoogle Scholar
255 Application of halogen lamp annealing for CMOS VLSI processing lwamatsu, S., Kato, J., Nakazaki, Y., Hiramoto, T., Arai, T., Igarashi, R. Electrochemical Society Extended Abstracts [Detroit, MI, 17–21 October 1982], vol.82–2, abstr. 216, pp. 348–349.Google Scholar
256 Applications of rapid isothermal annealing to shallow p-n junctions via BF2 implants Tung, N.C. Journal of the Electrochemical Society, 132 (4), 914–917 (April 1985).CrossRefGoogle Scholar
257 Beam processing in silicon device technology Hill, C. in MRS Symposia Proceedings 1980, vol.1, pp. 361–374.CrossRefGoogle Scholar
258 Device applications of rapid thermal processing Gibbons, J.F., Dobkin, D.M., Greiner, M.E., Hoyt, J.L., Opyd, W.G. in MRS Symposia Proceedings 1983, vol.23, pp. 37–50.CrossRefGoogle Scholar
259 Diode structures formed by rapid thermal annealing of boron implanted silicon Lunnon, M.E., Chen, J.T., Baker, J.E. Applied Physics Letters, 46 (1), 35–37 (1 January 1985).CrossRefGoogle Scholar
260 Electrical properties of implanted and rapid thermal annealed shallow p+-n junctions Ozguz, V.H., Wortman, J.J., Hauser, J.R., Simpson, L., Littlejohn, M.A., Chu, W.K., Rozgonyi, G.A. Applied Physics Letters, 45 (11), 1225–1226 (1 December 1984).CrossRefGoogle Scholar
261 Electrical, structural and chemical analysis of p-n junctions formed by BF2 implantation and rapid thermal annealing Wortman, J.J., Maszara, W., Sadana, D.K., Rozgonyi, G.A. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 47, p. 68.Google Scholar
262 Electron beam processing for MOS devices with shallow junctions McMahon, R.A., Hasko, D.G., Ahmed, H. Solid State Technology, 28 (6), 208–215 (June 1985).Google Scholar
263 Formation of shallow p+ junctions using two-step anneals Drowley, C.I., Adkisson, J., Peters, D., Chiang, S-Y. in MRS Symposia Proceedings 1984, vol.35, pp. 375–380.CrossRefGoogle Scholar
264 Formation of a TiSi2/n+ polySi layer by rapid lamp heating and its application to MOS devices Yachi, T. IEEE Electron Device Letters, EDL-5 (7), 217–220 (July 1984).CrossRefGoogle Scholar
265 Furnace and rapid thermal annealing of P-implanted Si for solar cell production Harrison, H.B., Yuanheng, L., Pogany, A., Kenny, M.J. in MRS Symposia Proceedings 1985, vol.45, pp. 343–348.CrossRefGoogle Scholar
266 Heat pulse annealing of n+-p and p+-n implanted diodes Shiau, Y., Teng, T.C., Kirby, B. Electrochemical Society Extended Abstracts [Detroit, MI, 17–21 October 1982], vol.82–2, abstr. 224, p. 360.Google Scholar
267 High-quality boron and BF2 + -implanted p+-n junctions in Si using solid phase epitaxy and transient annealing Vasudev, P.K., Schmitz, A.E., Olson, G.L. in MRS Symposia Proceedings 1984, vol.35, pp. 367–374.CrossRefGoogle Scholar
268 Junction leakage studies in rapid thermal annealed diodes Kamgar, A., Fichtner, W., Sheng, T.T., Jacobson, D.C. Applied Physics Letters, 45 (7), 754–756 (1 October 1984).CrossRefGoogle Scholar
269 Optimized multi-scan e-beam annealing of MOS devices Pollard, C.J., Glaccum, A.E., Speight, J.D. in MRS Symposia Proceedings 1981, vol.4, pp. 789–794.CrossRefGoogle Scholar
270 Properties of Si p-n junctions obtained by ion implantation and rapid annealing Boissy, M.C., Ruterana, P., Nouet, G. Journal de Physique, Colloque C5, book 44, 401–408 (October 1983).Google Scholar
271 Rapid annealing using halogen lamps Kato, J., lwamatsu, S. Journal of the Electrochemical Society, 131 (5), 1145–1152 (May 1984).CrossRefGoogle Scholar
272 Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices McMahon, R.A., Ahmed, H., Godfrey, D., Yallup, K.J. IEEE Transactions on Electron Devices, ED-30 (11), 1550–1555 (November 1983).CrossRefGoogle Scholar
273 Rapid isothermal annealing of boron ion implanted junctions Lasky, J.B. Journal of Applied Physics, 54 (10), 6009–6018 (October 1983).CrossRefGoogle Scholar
274 Rapid isothermal heating of VLSI MOS devices using a scanned e-beam system Rensch, D.B., Chen, J.Y. Electrochemical Society Extended Abstracts [Detroit, MI, 17–21 October 1982], vol.82–2, abstr. 158, pp. 250–251; full paper in VLSI Science and Technology/1982 eds. C.J. Dell'Oca, W.M. Bullis (Electrochem. Soc. Proc. vol.82–7, 1983) pp. 163–170.Google Scholar
275 Rapid thermal annealing of interface states in aluminum gate metal-oxide-silicon capacitors Reed, M.L., Fishbein, B., Plummer, J.D. Applied Physics Letters, 47 (4), 400–402 (15 August 1985).CrossRefGoogle Scholar
276 Rapid thermal processing (RTP) of shallow silicon junctions Seidel, T.E. in MRS Symposia Proceedings 1985, vol.45, pp. 7–20 CrossRefGoogle Scholar
277 Scanning-electron-beam annealing of ion-implanted p-n junction diodes McMahon, R.A., Ahmed, H., Speight, J.D., Dobson, R.M. Electronics Letters, 15 (14), 433–435 (5 July 1979).CrossRefGoogle Scholar
278 Scanning electron beam processing of devices McMahon, R.A., Speight, J.D., Ahmed, H. Electrochemical Society Extended Abstracts [Los Angeles, CA, 14–19 October 1979], vol.79–2, abstr. 525, pp. 1321–1322.Google Scholar
279 A self-aligned titanium polycide gate and interconnect formation scheme using rapid thermal annealing Wang, A., Lien, J. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985], vol.85–1, abstr. 223, pp. 317–318.Google Scholar
280 Self-aligned titanium silicidation of submicron MOS devices by rapid thermal annealing Tsukamoto, K., Okamoto, T., Shimizu, M., Matsukawa, T., Nakata, H. in Technical Digest of the International Electron Devices Meeting (IEDM 84), San Francisco, CA, 9–12 December 1984, pp. 130–133.Google Scholar
281 Shallow p+ junctions for VLSI CMOS Peters, D., Chiang, S.Y., Carey, P., Cham, K. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 48, p. 69; full paper in VLSI Science and Technology-1984, eds. K.E. Bean, G.A. Rozgonyi (Electrochem. Soc. Proc. vol.84-7, 1984) pp. 211–215.Google Scholar
282 Solar cells obtained by incoherent light annealing of phosphorus implanted silicon Correra, L., Pasini, A., Morettini, L., Pedulli, L. Japanese Journal of Applied Physics, 22 (8), L508–L510 (August 1983).CrossRefGoogle Scholar
283 Study of pulsed laser and multiple scan electron beam annealing of arsenic implanted n-channel MOS transistor source/drain regions Godfrey, D.J., Adams, A.E., McMahon, R.A., Ahmed, H. in VLSI Science and Technology/1982, eds. Dell'Oca, C.J., Bullis, W.M. (Electrochem. Soc. Proc. vol.82-7, 1983) pp. 154–162.Google Scholar
284 Transient annealing of boron implanted devices Wilson, S.R., Paulson, W.M., Varker, C.J., Lowe, A., Gregory, R.B., Reuss, R.H., Wu, S.Y., Whitfield, J.D. in MRS Symposia Proceedings 1983, vol.23, pp. 279–284.CrossRefGoogle Scholar
285 Applications of lamp-annealing method to the n+-layer of Wsix-gate self-aligned GaAs MESFETs Ohnishi, T., Yamaguchi, Y., Inada, T., Yokohama, N., Nishi, H. IEEE Electron Device Letters, EDL-5 (10), 403–405 (October 1984).CrossRefGoogle Scholar
286 Effect of infrared flash lamp annealing on the electrical properties of modulation-doped GaAs/n-AℓGaAs structures Kajikawa, Y., Mizuguchi, K., Murotani, T., Fujikawa, K., Sonoda, T. Journal of Vacuum Science and Technology, B2 (2), 249–251 (April-June 1984).CrossRefGoogle Scholar
287 Effects of tungsten-halogen lamp annealing on a selectively doped GaAs/n-AℓGaAs heterostructure grown by MBE Tatsuta, S., Inata, T., Okamura, S., Hiyamizu, S. Japanese Journal of Applied Physics, 23 (3), L147–L149 (March 1984).CrossRefGoogle Scholar
288 Halogen lamp annealing of GaAs for MESFET fabrication Badawi, M.H., Mun, J. Electronics Letters, 20 (3), 125–126 (2 February 1984).CrossRefGoogle Scholar
289 Incoherent light annealing of selectively implanted GaAs for MESFET application Kitching, S.A., Badawi, M.H., Bland, S.W., Mun, J. in MRS Symposia Proceedings 1984, vol.35, pp. 503–508.CrossRefGoogle Scholar
290 Infrared flash annealing for fabricating GaAs MESFETs Kuzuhara, M., Kohzu, H. and Takayama, Y. in Technical Digest of the International Electron Devices Meeting (IEDM 82), San Francisco, CA, 13–15 December 1982, pp. 170–173.Google Scholar
291 Infrared rapid thermal annealing for GaAs device fabrication Kohzu, H., Kuzuhara, M., Takayama, Y. Journal of Applied Physics, 54 (9), 4998–5003 (September 1983).CrossRefGoogle Scholar
292 Rapid thermal annealing of implanted layers for GaAs MESFETs and CCDs Wilson, M.R., Kosel, P.B., Geesner, C. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 October 1985], vol.85–2, abstr. 188, pp. 289–290.Google Scholar
293 Rapid thermal annealing of modulation-doped AℓxGa1−xAs/GaAs heterostructures for device applications Pearah, P., Henderson, T., Klein, J., Morkoc, H., Nilsson, B., Wu, O., Swanson, A.W., Ch'en, D.R. Journal of Applied Physics, 56 (6), 1851–1855 (15 September 1984).CrossRefGoogle Scholar
294 Rapid thermal annealing of Si-implanted GaAs for power FETs Kanber, H., Cipolli, R.J., Whelan, J.M. in MRS Symposia Proceedings 1984, vol.35, pp. 509–514.CrossRefGoogle Scholar
295 Rapid thermal annealing of Si-implanted GaAs for power field-effect transistors Kanber, H., Henderson, W.B., Rush, R.C., Siracusa, M., Whelan, J.M. Applied Physics Letters, 47 (2), 120–122 (15 July 1985).CrossRefGoogle Scholar
296 Transient annealing of modulation-doped GaAs/AℓxGa1−xAs heterostructures Henderson, T., Pearah, P., Morkoc, H., Nilsson, B. Electronics Letters, 20 (9), 371–373 (26 April 1984).CrossRefGoogle Scholar
297 Arc lamp zone melting the recrystallization of Si films on oxidized silicon substrates Stultz, T.J., Gibbons, J.F. Applied Physics Letters, 41 (9), 824–826, (1 November 1982).CrossRefGoogle Scholar
298 Arsenic diffusion into silicon from a spin-on source using rapid thermal annealing Alvi, N.S. Electronchemical Society Extended Abstracts [Toronto, Ontario, canada, 12–17 May 1985], vol.85–1, abstr. 259, p. 376.Google Scholar
299 Faceted melting and superheating of crystalline Si irradiated with incoherent light Celler, G.K., Jackson, K.A., Trimble, L.E., Robinson, McD., Lischner, D.J. in MRS Symposia Proceedings 1983, vol.23, pp. 409–414.CrossRefGoogle Scholar
300 Gettering of impurities by incoherent light annealed porous silicon Borisenko, V.E., Dorofeev, A.M. in MRS Symposia Proceedings 1982, vol.13, pp. 375–380.CrossRefGoogle Scholar
301 Heatpulse annealing of thermal donors in Czochralski silicon Hahn, S., Hung, D., Shatas, S. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 39, pp. 55–56; full paper in VLSI Science and Technology-1984, eds. K.E. Bean, G.A. Rozgonyi (Electrochem. Soc. Proc. vol.84-7, 1984) pp. 85–92.Google Scholar
302 Improving the quality of a heteroepitaxial CaF2 overlayer by rapid post annealing Pfeiffer, L., Phillips, J.M., Smith, T.P. III, Augustyniak, W.M., West, K.W. in MRS Symposia Proceedings 1984, vol.35, pp. 401–406.CrossRefGoogle Scholar
303 Incoherent light-induced diffusion of arsenic into silicon from a spin-on source Borisenko, V.E., Larsen, A.N. Applied Physics Letters, 43 (6), 582–584 (15 September 1983).CrossRefGoogle Scholar
304 Investigation of short time donor annihilation in silicon O'Mara, W.C., Parker, J.E., Butler, P., Gat, A. Applied Physics Letters, 46 (3), 299–302 (1 February 1985).CrossRefGoogle Scholar
305 Kinetics of radiative melting of Si Celler, G.K., Trimble, L.E., Wilson, L.O. in MRS Symposia Proceedings 1984, vol.35, pp. 635–640.CrossRefGoogle Scholar
306 Phosphorus diffusion using spin-on phosphosilicate-glass source and halogen lamps Kato, J., Ono, Y. Journal of the Electrochemical Society, 132 (7), 1730–1732 (July 1985).CrossRefGoogle Scholar
307 Rapid thermal annealing for oxygen donor annihilation O'Mara, W.C., Parker, J.E., Butler, P., Gat, A. Electrochemical Society Extended Abstracts [Toronto, Ontario, Canada, 12–17 May 1985], vol.85–1, abstr. 196, p. 276.Google Scholar
308 Rapid thermal processing as a “reduced temperature process” Sedgwick, T. Electrochemical Society Extended Abstracts, [Las Vegas,NV, 13–18 October 1985], vol.85–2, abstr. 247, p. 247.Google Scholar
309 Scanning electron beam annealing of oxygen donors in Czochralski silicon Pollard, C.J., Speight, J.D. in MRS Symposia Proceedings 1982, vol.13, pp. 413–418.CrossRefGoogle Scholar
310 Short-time annealing of dry-etching damage Ransom, C.M., Sedgwick, T., Chicokta, S.K., Cohen, S., Chappell, T.I. Electrochemical Society Entended Abstracts [New Orleans, LA, 7–12 October 1984], vol.84–2, abstr. 407, pp. 587–588.Google Scholar
311 Silicon damage caused by CCl4 reactive ion etching: its characterization and removal by rapid thermal annealing Fonash, S.J., Singh, R., Rohatgi, A., Rai-Choudhury, P., Caplan, P.J., Poindexter, E.H. Journal of Applied Physics, 58 (2), 862–866 (15 July 1985).CrossRefGoogle Scholar
312 Solid-phase epitaxial regrowth of ion-implanted silicon on sapphire using rapid thermal annealing Hodge, A.M., Cullis, A.G., Chew, N.G. in MRS Symposia Proceedings 1984, vol.35, pp. 393–399.CrossRefGoogle Scholar
313 Transient annealing of neutron-transmutation-doped silicon Pollard, C.J., Barraclough, K.G., Skolnick, M.S. in MRS Symposia Proceedings 1984, vol.35, pp. 407–412.CrossRefGoogle Scholar
314 Use of a rapid anneal to improve CaF2:Si(100) epitaxy Pfeiffer, L., Phillips, J.M., Smith, T.P. Ill, Augustyniak, W.M., West, K.W. Applied Physics Letters, 46 (10), 947–949 (15 May 1985).CrossRefGoogle Scholar
315 Use of rapid thermal annealing in a systematic ion implantation monitoring process Yarling, C.B. Solid State Technology, 28 (5), 252–254, (May 1985). 12.Google Scholar
316 A scanning electron beam annealing system McMahon, R.A., Ahmed, H. Electrochemical Society Extended Abstracts [Los Angeles, CA, 14–19 October 1979], vol.79–2, abstr. 526, pp. 1323–1324.Google Scholar
317 Characterization of multiple-scan electron beam annealing method McMahon, R.A., Ahmed, H., Dobson, R.M., Speight, J.D. Electronics Letters, 16 (8), 295–297 (10 April 1980).CrossRefGoogle Scholar
318 Diffusion, ion implantation and annealing Burggraaf, P.S. Semiconductor International, 6 (11), 101–102 (November 1983).Google Scholar
319 Dual electron beam processing system for semiconductor materials McMahon, R.A., Davis, J.R., Ahmed, H. in MRS Symposia Proceedings 1981, vol.4, pp. 783–788.CrossRefGoogle Scholar
320 Large area continuous electron beam for semiconductor processing Moore, C.A., Rocca, J.J., Collins, G.J., Russell, P.E., Geller, J. in MRS Symposia Proceedings 1983, vol.23, pp. 273–278.CrossRefGoogle Scholar
321 New reliable structure for high temperature measurement of silicon wafers using a specially attached thermocouple Cohen, S.A., Sedgwick, T.O., Speidell, J.L. in MRS Symposia Proceedings 1983, vol.23, pp. 321–326.CrossRefGoogle Scholar
322 Rapid isothermal annealing for semiconductor applications: aspects of equipment design Russo, C.J., Downey, D.F., Holden, S.C. in Ion Implantation: Equipment and Techniques, eds. Ryssel, H., Glawischnig, H. (Springer-Verlag, Heidelberg, 1983), pp. 520–531.CrossRefGoogle Scholar
323 Rapid isothermal annealing system Anonymous, Solid State Technology, 26 (10), 71–72 (October 1983).Google Scholar
324 Rapid optical annealing using the water-wall DC arc lamp Gelpey, J.C., Stump, P.O. Microelectronic Manufacturing and Testing, 6 (9), 22–24 (August 1983).Google Scholar
325 Rapid thermal processing systems Sheets, R.E. Microelectronic Manufacturing and Testing, 8 (8), 16–18 (July 1985).Google Scholar
326 Rapid thermal processing systems performance Thurston, W., Seaman, R. Microelectronic Manufacturing and Testing, 8 (8), pp. 1 and 8–10 (July 1985).Google Scholar
327 Rapid wafer heating: status 1983 Burggraaf, P.S. Semiconductor International, 6 (12), 68–74 (December 1983).Google Scholar
328 Wafer temperature rise in rapid thermal processing (RTP): a study of chamber effects and bulk silicon material parameters Basra, V., Downey, D.F. in Advanced Applications of Ion Implantation, eds. Current, M.I., Sadana, D.K. [Proceedings, SPIE, vol.530, Los Angeles, CA, 23–25 January 1985], pp. 97–105.CrossRefGoogle Scholar
329 A new model for redistribution of high dose phosphorus implants during rapid thermal annealing Paz-de-Araujo, C.A., Ting-ao, T., Kwor, R.Y.C. Electrochemical Society Extended Abstracts [Las Vegas, NV, 13–18 1985], vol.85–2, abstr. 248, p. 372.Google Scholar
330 A simple model for the transient, enhanced diffusion of ion-im planted phosphorus in silicon Morehead, F.F., Hodgson, R.T. in MRS Symposia Proceedings 1984, vol.35, pp. 341–346.CrossRefGoogle Scholar
331 Determination of optical rapid thermal annealing exposure time and pulse rising rate for minimum impurity redistribution Araujo, C.A. Paz de, Ting-ao, T. in MRS Symposia Proceedings 1985, vol.45, pp. 361–362.CrossRefGoogle Scholar
332 Dynamics of CO2 laser heating in the processing of silicon Siregar, M.R.T., Luthy, W., Affolter, K. Applied Physics Letters, 36 (10), 787–788 (15 May 1980).CrossRefGoogle Scholar
333 Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon Sedgwick, T.O., Michel, A.E., Cohen, S.A., Deline, V.R., Oehrlein, G.S. Applied Physics Letters, 47 (8), 848–850 (15 October 1985).CrossRefGoogle Scholar
334 Modeling of diffusion during rapid thermal processing Russo, C. in Advanced Applications of Ion Implantation, eds. Current, M.I., Sadana, D.K. [Proceedings, SPIE, vol.530, Los Angeles, CA, 23–25 January 1985], pp. 106–113.CrossRefGoogle Scholar
335 Modeling physical limitations on junction scaling of CMOS Fair, R.B., Wortman, J.J., Liu, J., Tischler, M., Masnari, N.A. IEEE Transactions on Electron Devices, ED-31 (9), 1180–1185, (September 1984).CrossRefGoogle Scholar
336 Modeling rapid thermal annealing processes for shallow junction formation in silicon Fair, R.B., Wortman, J.J., Liu, J. in Technical Digest of the International Electron Devices Meeting 1983 (IEDM 82), Washington, D.C., 5–7 December 1983 (IEEE, 1983), pp. 658–661.CrossRefGoogle Scholar
337 Modeling rapid thermal diffusion of arsenic and boron in silicon Fair, R.B., Wortman, J.J., Liu, J. Journal of the Electrochemical Society, 131 (10), 2387–2394 (October 1984).CrossRefGoogle Scholar
338 Surface temperatures produced in silicon using large diameter scanning CW sources Gibbons, J.F., Christel, L.A., Lietoila, A. in MRS Symposia Proceedings 1981, vol.4, pp. 739–750.CrossRefGoogle Scholar
339 Temperature rise induced in Si by continuous xenon arc lamp radiation Lietoila, A., Gold, R.B., Gibbons, J.F. Journal of Applied Physics, 53 (2), 1169–1172 (February 1982).CrossRefGoogle Scholar
340 Temperature transients in heavily doped and undoped silicon using rapid thermal annealing (RTA) Seidel, T.E., Lischner, D.J., Pai, C.S., Lau, S.S. Electrochemical Society Extended Abstracts [Cincinnati, OH, 6–11 May 1984], vol.84–1, abstr. 44, pp. 63–64.Google Scholar
341 Temperature transients in heavily doped and undoped silicon using rapid thermal annealing (RTA) Seidel, T.E., Lischner, D.J., Paf, C.D., Lau, S.S. in VLSI Science and Technology-1984, eds. Bean, K.E., Rozganyi, G.A. (Electrochem. Soc. Proc. vol.84-7, 1984) pp. 184–191.Google Scholar
342 Temperature transients in heavily doped and undoped silicon using rapid thermal annealing Seidel, T.E., Lischner, D.J., Pai, C.S., Lau, S.S. Journal of Applied Physics, 57(4), 1317–1321 (15 February 1985).CrossRefGoogle Scholar