Hostname: page-component-74656f9884-c52kr Total loading time: 0 Render date: 2026-11-08T12:20:20.131Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Processing: When Will it Replace Batch Processing?

Published online by Cambridge University Press:  10 February 2011

M. F. Pas  and
S. D. Pas
M. F. Pas
Affiliation:
Semiconductor Process, Expressway, MS 944 Dallas, Texas 75243
S. D. Pas
Affiliation:
Device Center and Manufacturing Science and Technology Center, Texas Instruments Inc., 13536 N. Central Expressway, MS 944 Dallas, Texas 75243
Get access

Abstract

Rapid Thermal Processing (RTP) is currently well established at the < 0.5 μm nodes for implant anneal and suicide formation/anneal in logic applications. Rapid Thermal Chemical Vapor Deposition (RTCVD) is being evaluated to deposit thin nitride for the DRAM storage node dielectric. A combination RTP/RTCVD has been evaluated in the form of a cluster tool to evaluate 60 Å gate oxides. These applications of RTP are considered to be process enabling because of either improved temperature ramp control or ambient control which are not available in batch processing. However, even with these specialized applications, rapid thermal processing comprises less than 20% of the front end thermal processes in a typical 0.35 μm fab. Process and equipment issues with rapid thermal processing remain which must be overcome if it is to replace batch processing at the 0.25 μm node. Process issues which are especially critical for RTCVD processing require improved temperature measurement, high growth/deposition rate, and an efficient method of cleaning the process chamber. Equipment issues are reliability and throughput which directly affect the tool cost of ownership. In this paper, each of these issues will be addressed and compared to batch processing using a generic logic process flow.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 147
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Dip, A., “Fast Thermal Processing: Batch Comes Back”, Solid State Technology, June, 1996.Google Scholar
2 Semiconductor Industry Association, “1994 - The National Technology Roadmap for Semiconductors”.Google Scholar
3 Kobayashi, K., Inaba, Y., Ogata, T., Katayama, T., Watanabe, H., Matsui, Y. and Hirayama, M., “Ultrathin Silicon Nitride Films Fabricated by Single-Wafer Processing Using an SiH2-Cl2-NH3-H2 System and In Situ H2 Cleaning”, JECS, 143 (4), 1459, April, 1996.Google Scholar
4 Kuehne, J. and Hattangady, S., “Kinetics, Chemical Composition and Reoxidation Kinetics of Rapid Thermal N2O Oxynitride Growth”, RTP'96, p 207.Google Scholar
5 Kuehne, J., Hattangady, S., Piccirillo, J., Xing, G., and Miner, G., “Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides”, MRS Spring Meeting, 1997.Google Scholar
6 Riley, T. J., Hossain-Pas, S., Nanda, A. K., Pas, M. F. and Miner, G., “Cost of Ownership and Temperature Measurement and Control Capability Evaluation of Applied Materials’ Rapid Thermal Processor Under SEMATECH J100 Project”, 4th Int. Conf. on Advanced Thermal Processing of Semiconductors - RTP'96.Google Scholar
7 Pas, M. F., Wise, R. L., Tiner, P., Hey, P., Hsia, S. and Brennan, J. “Applications of Rapid Thermal Chemical Vapor Deposition (RTCVD): Silicon Nitride for 0.25 μm Processing”, 7th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, Cambridge, MA, 1996.Google Scholar
8 Nanda, A. K. Riley, T., Miner, G., Pas, M. F., and Hossain-Pas, S., “Evaluation of Applied Materials’ Rapid Thermal Processor Using SEMATECH Methodologies for 0.25 μm Technology - Part I”, 1996 Spring MRS Meeting, San Francisco, CA Google Scholar
9 Riley, T., Nanda, A. K., Miner, G., Pas, M. F., Hossain-Pas, S. and Velo, L., “Evaluation of Applied Materials’ Rapid Thermal Processor Using SEMATECH Methodologies for 0.25 μm Technology - Part II”, 1996 Spring MRS Meeting, San Francisco, CA.Google Scholar
10 Pas, M. F., Pas, S. D., Rodder, M. and Nanda, A., “Evaluation of Rapid Thermal Processing (RTP) for Deep Submicron Device Processing”, ISSM'96 Proceedings, p. 105.Google Scholar
11 Kittl, J., Hong, Q., Rodder, M., Prinslow, D. A., and Misium, G., “A Ti Salacide Process for 0.10 μm Gate Length CMOS Technology”, VLSI Digest,Google Scholar
12 Pas, M. F., Cleavelin, C. R., Pas, S. D., Kuehne, J., Kittl, J., Wise, R., Tiner, P., Hsia, S., Miner, G., and Hey, P., “Rapid Thermal Processing: Coming of Age at Texas Instruments: 0.25 μm Development Leading to Larger Diameter Wafer Manufacturing”, 4th Int. Conf. on Advanced Thermal Processing of Semiconductors - RTP'96.Google Scholar
13 SEMATECH Transfer Document # 95123045A-ENG, “Clean-Cluster Applications Development, Project E58 - Final Report”, 1995.Google Scholar
14 Rodder, M., Aur, S. and Chen, I. C., “A Scaled 1.8 V, 0.18 μm Gate Length CMOS Technology: Device Design and Reliability Considerations”, 1995 IEDM Tech. Digest, pp. 415–418.Google Scholar
15 Hey, H. P. W., “Enabling Process Integration of Poly Silicon and WSix based on Rapid Thermal CVD”, 4th Int. Conf. on Advanced Thermal Processing of Semiconductors - RTP'96.Google Scholar
16 Runyan, W. R. and Bean, K. K., Semiconductor Integrated Circuit Processing Technology, Addison-Wesley Publishing Co., Reading MA, 1994.Google Scholar
17 Kuehne, J., “Kinetics of Wet Oxidation in a G2 AVP: Application to Process Control”, TI Internal Report, 1992.Google Scholar