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Rapid Titanium Silicidation: A Comparative Study of two Rta Reactors

Published online by Cambridge University Press:  21 February 2011

M. Bariatro,
A. Fontes,
J. Q. Quacchia,
R. Furlan and
J. J. Santiago-Aviles
M. Bariatro
Affiliation:
Laboratorio de Sistemas Integraveis, EPUSP, Sao Paulo, Brasil
A. Fontes
Affiliation:
Laboratorio de Sistemas Integraveis, EPUSP, Sao Paulo, Brasil
J. Q. Quacchia
Affiliation:
Departamento de Fisica Nuclear, USP, Sao Paulo, Brasil
R. Furlan
Affiliation:
Laboratorio de Sistemas Integraveis, EPUSP, Sao Paulo, Brasil
J. J. Santiago-Aviles
Affiliation:
Department of Electrical Engineering, University of Pennsylvania, Philadelphia, PA, 19104
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Abstract

In this work we studied titanium silicide formation by cosputtering onto silicon dioxide. Samples deposited with various (Si/Ti) atomic ratios were analyzed by Rutherford Backscattering Spectrometry (RBS). Isocronal annealings were conducted by means of Rapid Thermal Processing (RTP) in two types of furnaces: a vacuum and an atmospheric pressure (argon). Phase formation was monitored by resistivity measurements, X-Ray diffraction (XRD), and Scanning Electron Microscopy (SEM). It is observed that the final phase formation follows the thennodynamic equilibrium diagram, determined by stoichiometry, occurring at 800°C for the vacuum furnace, and at 900°C for the atmospheric RTP furnace. Sequential thermal treatments indicated the formation of TiSi2-C49 and/or TiSi after 400°C.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993, 95
Copyright
Copyright © Materials Research Society 1993

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References

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