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REACE: A New Algorithm for Low Energy Ion Implantation Simulation.

Published online by Cambridge University Press:  01 February 2011

Xiaokang Shi,
Min Yu,
Hao Shi,
Ru Huang,
Xing Zhang,
Yangyuan Wang and
Jinyu Zhang
Xiaokang Shi
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Min Yu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Hao Shi
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Ru Huang
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xing Zhang
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Yangyuan Wang
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinyu Zhang
Affiliation:
Fujitsu R&D Center Co., LTD., Room B1003, Eagle Run Plaza No.26 Xiaoyun Road, Chaoyang District Beijing, 100016, P. R. China
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Abstract

A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into crystalline targets is presented, named REACE (Rare Event Algorithm with Cascade Effect). This method can speed up the MD simulation of ion implantation with cascade processes. As a result, the time required to perform a simulation with high precision and dose effect is drastically reduced. And many details producing statistical noise in the simulation are simulated in the REACE and help it to be more reasonable and reliable.

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References

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